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of 5
pro vyhledávání: '"Richard Collett"'
Autor:
Charito Antonio, Kazuma Yamamoto, Richard Collett, Edward Ng, Murirathna Padmanaban, Srinivasan Chakrapani, Deepa Parthasarathy, Mark Neisser, Alberto D. Dioses, Yasushi Akiyama, Shinji Miyazaki, Takanori Kudo
Publikováno v:
Journal of Photopolymer Science and Technology. 23:731-740
Developable bottom anti-reflective coatings (DBARCs) are useful for implant layers because they eliminate the plasma etch step avoiding damage to the plasma sensitive layers during implantation. It is expected that DBARC will also be used for non-imp
Autor:
Deepa Parthasarathy, Alberto D. Dioses, Richard Collett, Mark Neisser, Munirathna Padmanaban, Edward Ng, Charito Antonio, Srinivasan Chakrapani, Takanori Kudo
Publikováno v:
SPIE Proceedings.
Developable BARCs (DBARCs) are useful for implant layers because they eliminate the plasma etch step avoiding damage to the plasma sensitive layers during implantation. It is expected that DBARC will also be used for non-implant layers and double exp
Autor:
Shinji Miyazaki, Deepa Parthasarathy, Yuki Ubayashi, Edward Ng, Charito Antonio, Yasushi Akiyama, Takanori Kudo, Richard Collett, Alberto D. Dioses, Kazuma Yamamoto, Munirathna Padmanaban, Mark Neisser, Srinivasan Chakrapani
Publikováno v:
SPIE Proceedings.
Developable bottom anti-reflective coatings (DBARC) are an emerging litho material technology. The biggest advantage of DBARC is that it eliminates the plasma etch step, avoiding damage to plasma sensitive layers during implantation. AZ has pioneered
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Cost-effective approaches to double patterning are currently an area of intense interest. This paper describes an update on the progress of AZ's Vapor Reaction Chamber (VRC) freeze approach to double patterning. Swift integration of the VRC process w
Autor:
Ping-Hung Lu, Yayi Wei, Dalil Rahman, Lyudmila Pylneva, Jennifer Loch, David J. Abdallah, Richard Collett, Mark Neisser, Douglas Mckenzie, Allen Timko, Ruzhi Zhang, Hengpeng Wu
Publikováno v:
SPIE Proceedings.
Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. This paper discusses the fundamental aspects of the Si-containing BARC (Si-BARC) materials with u