Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Richard A. Forman"'
Autor:
Richard A. Forman, Herbert S. Bennett
Publikováno v:
Applied optics. 16(11)
The case in which a laser beam modulated at angular frequency omega passes through the weakly absorbing windows of a gas cell which contains a nonabsorbing gas is investigated in this paper. In particular, the frequency dependences of the acoustic st
Autor:
Herbert S. Bennett, Richard A. Forman
Publikováno v:
Applied optics. 15(10)
Researchers seek improved ways to measure the surface absorption and the bulk absorption coefficients of highly transparent materials. Procedures are presented here by which one may determine separately the surface absorption and the bulk absorption
Autor:
Herbert S. Bennett, Richard A. Forman
Publikováno v:
Applied optics. 15(2)
For the case in which a laser beam passes through the weakly absorbing windows of a cell containing a non-absorbing gas, the temperature profiles in the cell windows and the pressure and temperature profiles in the gas have been calculated. Both the
Publikováno v:
Physical Review B. 44:5492-5496
X-ray and optical studies of ion-damaged amorphous germanium reveal a structural relaxation produced by low-temperature (200 {degree}C) annealing. This relaxation appears to be qualitatively different from that observed previously at higher annealing
Autor:
Richard A. Forman, Herbert S. Bennett
Publikováno v:
Journal of Applied Physics. 48:1217-1222
For the case in which a pulsed laser beam passes through the weakly absorbing windows of a gas cell containing a nonabsorbing gas, the time rate of change of the relative pressure rise immediately after the cessation of the laser beam correlates dire
Publikováno v:
Journal of Applied Physics. 46:2774-2780
The pressure dependence of the R1 ruby fluorescence line has been calibrated at 25 °C against the compression of NaCl. Pressures are determined using the Decker equation of state for NaCl. The dependence is linear to 195 kbar following the equation
Publikováno v:
Solid State Communications. 54:845-848
Hot photoluminescence in GaAs:Be is reported for the first time. The emission from a sample with p = 6.5 × 1016 cm-3 at 10 K consists of a shoulder at 1.803 eV followed by a series of broad peaks at 1.781, 1.742, 1.704, 1.666, and 1.628 eV. Analysis
Autor:
Richard A. Forman, Evelyn M. Rockar
Publikováno v:
Physical Review B. 14:3621-3629
Autor:
Richard A. Forman, R.E. Stahlbush
Publikováno v:
Journal of Luminescence. 26:227-232
The photoluminescence spectrum of Si:In measured at 2 and 4 K using samples from several suppliers has been found to be preparation sensitive. In particular, intensity variations allow us to distinguish a sharp no-phonon line at 1.118 eV, variously r