Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Riccardo Fontanini"'
Publikováno v:
Neuromorphic Computing and Engineering, Vol 4, Iss 3, p 034004 (2024)
A primary objective of Spiking Neural Networks is a very energy-efficient computation. To achieve this target, a small spike rate is of course very beneficial given the event-driven nature of such a computation. A network that processes information e
Externí odkaz:
https://doaj.org/article/1d3dd57b75cd4e649208dee63e065fb3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 324-333 (2022)
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper revisits the t
Externí odkaz:
https://doaj.org/article/a306f22c7ffc44e4b50cf6dfde8d42f3
Autor:
Riccardo Fontanini, Mattia Segatto, Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, David Esseni Esseni
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1202-1209 (2021)
An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here presented in details. After a precise calibration again experiments, the model is exploited for an insightful study of the design of FTJs as synaptic devices for ne
Externí odkaz:
https://doaj.org/article/abff1f0ffb07401fa2146b6614938be0
Autor:
Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, Riccardo Fontanini, David Esseni, Mattia Segatto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1202-1209 (2021)
An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here presented in details. After a precise calibration again experiments, the model is exploited for an insightful study of the design of FTJs as synaptic devices for ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d201a60ebe457fa7ed5b06c015196a7
https://doi.org/10.1109/jeds.2021.3120200
https://doi.org/10.1109/jeds.2021.3120200
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper revisits the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0927446895d2029f2adb49d56b1458d7
http://arxiv.org/abs/2201.12103
http://arxiv.org/abs/2201.12103
Autor:
David Esseni, Riccardo Fontanini
Publikováno v:
Nanoscale. 13(21)
The negative capacitance (NC) operation of ferroelectric materials has been originally proposed based on a homogeneous Landau theory, leading to a simple NC stabilization condition expressed in terms of macroscopic quantities. A multi-domain theory,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8b1de27c23fbf1f4eeef736fea9fe6f
https://pubmed.ncbi.nlm.nih.gov/34008596
https://pubmed.ncbi.nlm.nih.gov/34008596
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies
Autor:
Riccardo Fontanini, David Esseni, Daniel Lizzit, Marco Massarotto, Francesco Driussi, Mirko Loghi
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle and the mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdb39a4f54c4b8f8e22d4c0e4e54cfad
Autor:
Mirko Loghi, Riccardo Fontanini, Ruben Specogna, David Esseni, Francesco Driussi, Marco Massarotto
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase the read c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19d1d662acb137a45549a788d8f3452d