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pro vyhledávání: '"Ricardo Cardoso Rangel"'
Autor:
Ricardo Cardoso Rangel
Publikováno v:
Biblioteca Digital de Teses e Dissertações da USPUniversidade de São PauloUSP.
Neste trabalho é desenvolvido de forma inédita no Brasil um processo simples de fabricação de transistores FD SOI nMOSFET (Fully-Depleted Silicon-On-Insulator) com porta de silício policristalino, para servir como base para futuros desenvolvimen
Autor:
Pedro Henrique Duarte, Ricardo Cardoso Rangel, Daniel Augusto Ramos, Leonardo Yojo, Katia Sasaki, Paula Agopian, Joao Martino
Publikováno v:
ECS Transactions. 111:279-284
This paper presents, for the first time, the BESOI MOSFET working as Ion Sensitive Field Effect Transistor (ISFET): the BESOI ISFET. Experimental measurements were performed with standard pH solution replacing the gate electrode. The threshold voltag
Autor:
Leonardo Shimizu Yojo, Ricardo Cardoso Rangel, Katia Regina Akemi Sasaki, Joao Antonio Martino
Publikováno v:
ECS Meeting Abstracts. :1377-1377
Sensors for biological components detection have been attracting attention due to the numerous application possibilities, for instance, the food industry and the point of care health(1). In this context, field-effect-transistors (FET) based sensors b
Autor:
Leonardo Shimizu Yojo, Ricardo Cardoso Rangel, Katia Regina Akemi Sasaki, Joao Antonio Martino
Publikováno v:
ECS Meeting Abstracts. :1480-1480
New devices architectures have been proposed to enable the evolution of semiconductors technology. One possibility is the reconfigurable transistors [1], i.e., transistor that can act as an n-type or as a p-type, which could enable circuits performin