Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Ricardo C. Rangel"'
Autor:
Henrique L. Carvalho, Ricardo C. Rangel, Katia R. A. Sasaki, Paula G. D. Agopian, Leonardo S. Yojo, Joao A. Martino
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e99fd842c8094fb2177ae652676fe2b
https://doi.org/10.1109/sbmicro55822.2022.9880960
https://doi.org/10.1109/sbmicro55822.2022.9880960
Autor:
Pedro H. Duarte, Ricardo C. Rangel, Daniel A. Ramos, Leonardo S. Yojo, Carlos A.B. Mori, Katia R. A. Sasaki, Paula G. D. Agopian, Joao A. Martino
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98fe9b1d51e3f261ee934d089887c164
https://doi.org/10.1109/sbmicro55822.2022.9881031
https://doi.org/10.1109/sbmicro55822.2022.9881031
Autor:
Marcos N. Watanabe, Fábio Izumi, Ricardo C. Rangel, Sebastião G. Dos Santos Filho, Gabriel Oliveira Louzada, Stefanie Pereira Regis, Verônica Christiano Abê, William Tsuyoshi Shiga
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-5
This article discusses fabrication, characteriza-tion and studies of the C-V characteristics of SiO layers depos-ited by PVD on Si-p substrates with doping around 1x1016 cm-3. MOS capacitors (Metal-Oxide-Semiconductor) with Al/SiO2/Si-P, Al/SiO/Si-P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e1158031c0e43b7cfbc9cd5277b903
https://doi.org/10.29292/jics.v15i2.175
https://doi.org/10.29292/jics.v15i2.175
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-6
This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f162b85a3e0b80d28dc70aeea934bc
https://doi.org/10.29292/jics.v15i1.107
https://doi.org/10.29292/jics.v15i1.107
Publikováno v:
ECS Transactions. 97:115-120
The Back Enhance (BE) SOI MOSFET is a device whose operation can be tuned by the back gate bias (VGB), i.e., it can act as an n- or p-type MOSFET if VGB is positive or negative enough, respectively. This characteristic was explored in the bio-sensing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e6278e8db4c6f21343da886229fef9
https://doi.org/10.1149/09705.0115ecst
https://doi.org/10.1149/09705.0115ecst
Publikováno v:
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS).
The study of a dielectric-modulated biosensor built on the BESOI MOSFET structure showed a crossing point of the transfer characteristics curves for target biomaterials with different dielectric constants (CID – Current Invariant Dielectric). The C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60b7fb6b09cc455392335762a7f8f7d8
https://doi.org/10.1109/eurosoi-ulis53016.2021.9560672
https://doi.org/10.1109/eurosoi-ulis53016.2021.9560672
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
In this work, an improvement of Schottky junction was performed for application in Back Enhanced BESOI MOSFET. It was observed that the formation of NiSi prior to the deposition of the aluminum on it, protects the Schottky junction from the aluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ebd9f1a95fae736c28f50dcd5daaf58
https://doi.org/10.1109/sbmicro50945.2021.9585745
https://doi.org/10.1109/sbmicro50945.2021.9585745
Autor:
Sebastião G. Dos Santos Filho, Ricardo C. Rangel, Gabriel Oliveira Louzada, Marcos N. Watanabe
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
This article discusses the use of glass coverslips with thickness in the range of 70 to 108 µm as anti-reflection layers in order to increase the efficiency of MOS photovoltaic cells with Al/SiO 2 (1.7 nm)/Si-P structure fabricated on 10 Ω.cm subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf86668e4c81b201f1cc6a822dc98d90
https://doi.org/10.1109/sbmicro50945.2021.9585766
https://doi.org/10.1109/sbmicro50945.2021.9585766
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
This paper reports the study of the Back Enhanced SOI (BESOI) MOSFET improvement through the inclusion of ndoped regions on the drain and source regions underlapped with the gate. This study was performed using TCAD Synopsys Sentaurus simulator. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c56813a6265249c2eea7819967ae88e
https://doi.org/10.1109/sbmicro50945.2021.9585735
https://doi.org/10.1109/sbmicro50945.2021.9585735
Publikováno v:
ECS Transactions. 85:79-84
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54f6b280a83c41c0a178eb66e072e16
https://doi.org/10.1149/08508.0079ecst
https://doi.org/10.1149/08508.0079ecst