Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ricardo Ascazubi"'
Autor:
Ketul B. Sutaria, Minki Cho, Anisur Rahman, Jihan Standfest, Rahul Sharma, Swaroop Namalapuri, Shiv Gupta, Bahar Ajdari, Ricardo Ascazubi, Balkaran Gill
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
IRPS
We report on pulsed laser and high-energy proton induced Single Event Latchup (SEL) testing. Arrayed Silicon Controlled Rectifier (SCR) structures that implement various different layout design styles relevant to SEL have been designed and fabricated
Autor:
Kai Liu, Xi-Cheng Zhang, Ricardo Ascazubi, Y. Deng, Michael Shur, Victor Roytburd, Roland Kersting, Jingzhou Xu
Publikováno v:
International Journal of Infrared and Millimeter Waves. 25:215-228
We describe a method to determine the radiation spectrum of terahertz sources using a transmitted Fabry-Perot interferometer and a bolometer detector. Our novel Fabry-Perot spectrometer can measure the spectrum of an unknown broadband sub-terahertz a
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Pulsed laser irradiation is proposed as a fast turn-around tool to predict the soft error rate (SER) performance in modern process technologies. 32nm planar and 22nm Tri-Gate device-level proton and laser cross section results are presented.
Publikováno v:
Applied Physics Letters. 84:4810-4812
We report on optically excited terahertz (THz) emission by indium nitride (InN) thin films. We have used 70 fs titanium–sapphire laser pulses with wavelengths at 800 nm to generate THz-radiation pulses. The InN thin films are deposited on sapphire
Autor:
Victor Ryzhii, Michael Shur, Jingzhou Xu, Remis Gaska, Xi-Cheng Zhang, Grigory Simin, Y. Deng, Ricardo Ascazubi, Roland Kersting, M. Asif Khan
Publikováno v:
Applied Physics Letters. 84:70-72
We report on millimeter wave electromagnetic radiation from a GaN high electron mobility transistor with the gate length of 1.5 μm at 8 K. The emission takes place at gate and drain voltages in the linear regime of operation but close to the saturat
Publikováno v:
2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics.
We report an experimental study of femtosecond near-infrared optically excited THz-emission from InN thin films grown by molecular beam epitaxy (MBE) on sapphire substrates. THz-emission was investigated as a function of structural as well as electro
Publikováno v:
Physical Review B. 74
We report an experimental study on terahertz (THz) emission from ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{In}}_{x}\mathrm{Sb}$ with $0\ensuremath{\le}x\ensuremath{\le}1$. THz emission is excited by femtosecond near-infrared laser pulses. For this ma
Publikováno v:
Advanced Biomedical and Clinical Diagnostic Systems IV.
Time-domain Terahertz (THz) spectroscopy and imaging is currently evaluated as a novel tool for medical imaging and diagnostics. The application of THz-pulse imaging of human skin tissues and related cancers has been demonstrated recently in-vitro an
Publikováno v:
Physical Review B. 72
We report femtosecond optically excited terahertz THz emission from tellurium doped GaSb at room temperature. The influence of the majority and minority carrier type and concentrations on the strength of the THz emission is investigated. Strong enhan