Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Ricarda Nebling"'
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96cb59a3dc8c69cd6ef073d672cdebf4
https://doi.org/10.1117/1.jmm.21.3.034002
https://doi.org/10.1117/1.jmm.21.3.034002
Autor:
Tao Shen, Dimitrios Kazazis, Hyun-Su Kim, Atoosa Dejkameh, Ricarda Nebling, Yasin Ekinci, Iacopo Mochi
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57d742915749980f07396665ea0c55cd
https://doi.org/10.1117/12.2613337
https://doi.org/10.1117/12.2613337
Publikováno v:
Photomask Technology 2021.
With the transition of EUV lithography to high volume manufacturing, EUV mask metrology has become a critical requirement. At PSI, we are developing RESCAN, a lensless actinic microscope dedicated to EUV mask inspection. RESCAN is based on coherent d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a0b1d00802981af1b574638eefb71bc
https://doi.org/10.1117/12.2601246
https://doi.org/10.1117/12.2601246
Publikováno v:
Computational Optics 2021.
EUV photomasks define the lithographic layers of chips, which are binary structures of relatively low versatility in contrast to specimen in biology or materials science. This knowledge can be used in EUV photomask imaging and inspection methods to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::942431d8bd56b3897fb81d8803f1229f
https://doi.org/10.1117/12.2600233
https://doi.org/10.1117/12.2600233
Publikováno v:
Computational Optics 2021.
High-resolution imaging at short wavelengths from extreme ultraviolet to hard X-rays has many applications in a plethora of fields from astronomy to biology and semiconductor metrology. Unfortunately, efficient optics for these wavelengths are diffic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59b79569034b640b49c65feed74b76f8
https://doi.org/10.1117/12.2597060
https://doi.org/10.1117/12.2597060
Publikováno v:
Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology.
In prior work, progress was shown in the systematic characterization of the process space for efficient and effective repair of extreme ultraviolet (EUV) photomasks using an ultrafast (femtosecond) pulsed deep ultraviolet (DUV) laser apparatus. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef628a487a19bff67ec31f2cd4a3a91
https://doi.org/10.1117/12.2601395
https://doi.org/10.1117/12.2601395
Autor:
Atoosa Dejkameh, Iacopo Mochi, Kazazis Dimitrios, Tao Shen, Hyun-Su Kim, Uldis Locans, Ricarda Nebling, Yasin Ekinci
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
Anamorphic mask design is necessary to overcome the geometrical limitation imposed by the reflective geometry used in EUV lithography projection systems and will be used in high-NA EUVL scanners. In this study, we demonstrate the capability of anamor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d9e960648cbc8c4f83a23fcea3a54c4
https://doi.org/10.1117/12.2584518
https://doi.org/10.1117/12.2584518
Autor:
Atoosa Dejkameh, Yasin Ekinci, Uldis Locans, Dimitrios Kazazis, Hyun-Su Kim, Iacopo Mochi, Ricarda Nebling
Publikováno v:
Photomask Technology 2020.
Actinic EUV mask metrology is essentially needed for EUV lithography in the semiconductor device manufacturing process. At PSI, we are developing RESCAN, a coherent diffractive imaging (CDI)-based platform that can meet current and future mask inspec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4384575c5431c3cfd406f644604471cc
https://doi.org/10.1117/12.2573240
https://doi.org/10.1117/12.2573240
Publikováno v:
Photomask Technology 2020.
This publication is a continuation of a prior work on the process space available for the repair and localized cleaning of extreme ultraviolet lithography (EUVL) photomasks with the fpIII femto-pulsed deep ultraviolet (UV) repair tool. This next phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6559d673b9fe5531bfa4a9326c62cc
https://doi.org/10.1117/12.2573084
https://doi.org/10.1117/12.2573084
Publikováno v:
Extreme Ultraviolet Lithography 2020.
RESCAN is a coherent diffraction imaging based APMI microscope prototype. A complex image of the EUV reticle is reconstructed from diffraction patterns collected on a CCD detector. With the next upgrade of the tool, the resolution will be enhanced fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e856fc3f2728d4a93bf1cd486603601
https://doi.org/10.1117/12.2573181
https://doi.org/10.1117/12.2573181