Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

Autor: Weicheng You, Riazul Arefin, Fatih Uzgur, Seunghyun Lee, Sadhvikas J. Addamane, Baolai Liang, Shamsul Arafin

Publikováno v: Optics Letters. 48:1938

This Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1bc76cf22a6f2e7141e8a190954c1b3e
https://doi.org/10.1364/ol.485775

Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

Autor: Mathieu Bertrand, Philippe Boucaud, Isabelle Sagnes, Sébastien Sauvage, Vincent Reboud, Moustafa El Kurdi, Riazul Arefin, Konstantinos Pantzas, Jérémie Chrétien, Binbin Wang, Anas Elbaz, Gilles Patriarche, Alexei Chelnokov, Lara Casiez, Frederic Boeuf, Etienne Herth, Nicolas Pauc, Razvigor Ossikovski, Emilie Sakat, Antonino Foti, Jean-Michel Hartmann, Xavier Checoury, Vincent Calvo

Publikováno v: ACS Photonics
ACS Photonics, 2020, 7, pp.2713. ⟨10.1021/acsphotonics.0c00708⟩
ACS photonics
ACS photonics, American Chemical Society, 2020, 7 (10), pp.2713-2722. ⟨10.1021/acsphotonics.0c00708⟩

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band stru

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e40945e7a302aec808850b209767507
https://doi.org/10.1021/acsphotonics.0c00708

MBE Growth and Characterization of InAlGaAs/GaAs Quantum Dots

Autor: Jaedu Ha, Jong Su Kim, Sanjay Krishna, Riazul Arefin, Seung Hyun Lee, Hyemin Jung, Shamsul Arafin

Publikováno v: 2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

InAlGaAs/GaAs quantum dots (QDs) are grown by molecular beam epitaxy and subsequently characterized to achieve emission $\lt 1\ \mu$m. Growth parameters are optimized to grow a new generation of homogeneous quaternary QDs with a PL FWHM of $\sim 60\

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3138b26d304e63a4fd28e8254d3734e
https://doi.org/10.1109/rapid51799.2021.9521407

Lowering GeSn lasing thresholds for future integration on Si (Conference Presentation)

Autor: Jérémie Chrétien, Alexei Chelnokov, Gilles Patriarche, Lara Casiez, Jean-Michel Hartmann, Isabelle Sagnes, Vincent Calvo, Anas Elbaz, Sébastien Sauvage, Nicolas Pauc, Xavier Checoury, Moustafa El Kurdi, K. Pantzas, Vincent Reboud, Riazul Arefin

Publikováno v: Silicon Photonics XV.

Lasing in bulk GeSn alloys have been reported lately with relatively high thresholds in the range of several hundreds of kW/cm². This can be mainly attributed to high defect densities of high Sn content alloy thick layers grown on relaxed Ge-VS. Ind

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4798472d08ae635cb2a7b2769a4667b9
https://doi.org/10.1117/12.2545510

Gallium- and Silicon Nitride-Based Photonic Integrated Circuits for Visible Wavelengths

Autor: Sarvagya Dwivedi, Riazul Arefin, Syed M. N. Hasan, Weicheng You, Hyemin Jung, Sujit H. Ramachandra, Shamsul Arafin

Publikováno v: Conference on Lasers and Electro-Optics.

Photonic integration of GaN and Si-SiN platforms at the shortest visible wavelength is reported. Maximum theoretical coupling efficiencies up to 51% and 24% for a vertical grating coupler (fiber-chip) and hybrid integration, respectively, are achieve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a879bb3b8d3d58dc89abb892d8f06e14
https://doi.org/10.1364/cleo_at.2020.jth2b.19