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Autor:
Issam Lakhdari, Nouredine Sengouga, Madani Labed, Toufik Tibermacine, Riaz Mari, Mohamed Henini
Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy and their current–voltage (I–V) and capacitance–voltage (C–V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f180a5fc93bdd971432beabd6fb6aa0
