Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Rianne C. Plantenga"'
Autor:
Håkon Ikaros T. Hauge, Francesco Montalenti, Rianne C. Plantenga, Sebastian Kölling, Roberto Bergamaschini, Emilio Scalise, Leo Miglio, Yizhen Ren, M Albani, Marcel A. Verheijen, Erik P. A. M. Bakkers
Publikováno v:
Nanoscale, 13(20), 9436-9445. Royal Society of Chemistry
Formation of Ge-rich prismatic inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires is reported and discussed in relation to a growth model that explains their origin. An accurate TEM/EDX analysis shows that such prisms develop right on to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::368227448eccfebedbbade66081d0e0a
https://doi.org/10.1039/d0nr08051a
https://doi.org/10.1039/d0nr08051a
Autor:
Michael E. Flatté, Toshiyuki Kaizu, Yukihiro Harada, PM Paul Koenraad, Takashi Kita, Rianne C. Plantenga, Victoria Kortan
Publikováno v:
Physical Review B, 96(15):155210. American Physical Society
Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating spatially localized resonant states within the conduction band, pair and cluster states in the band gap, and very large shifts in the conduction-band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc5d8b3f94cc7b6fa2d15d6c790d6556
https://research.tue.nl/en/publications/615214ff-4fea-4a3f-8267-a5644f75848e
https://research.tue.nl/en/publications/615214ff-4fea-4a3f-8267-a5644f75848e
Publikováno v:
Microscopy and Microanalysis. 23:670-671
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9629585aa426f3ce60e7a1ea1d10b8ae
https://doi.org/10.1017/s1431927617004019
https://doi.org/10.1017/s1431927617004019
Autor:
Sonia Conesa Boj, PM Paul Koenraad, Rianne C. Plantenga, Håkon Ikaros T. Hauge, Yizhen Ren, Marcel A. Verheijen, Sebastian Koelling, Ang Li, Erik P. A. M. Bakkers, Simone Assali
Publikováno v:
ECS Transactions, 75(8), 751-760. Electrochemical Society, Inc.
Silicon and Germanium naturally occur in a cubic crystal structure and have an indirect bandgap1 making them unsuitable materials for light emission. When synthesized in a hexagonal crystal structure Germanium and Silicon-Germanium are however predic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2174915590c8b58f24119f04c16958a6
https://doi.org/10.1149/ma2016-02/30/1949
https://doi.org/10.1149/ma2016-02/30/1949