Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ria Lombaerts"'
Publikováno v:
Microelectronic Engineering. 13:37-40
The final lithographic performance of the Desire process is mainly determined by the selectivity of Si incorporation during the silylation step. The influence of the silylation conditions on both the Si contrast and the silylation kinetics have been
Publikováno v:
SPIE Proceedings.
The quality of resist profiles obtained In surface Imaging techniques based on selective diffusion of a silylating agent and subsequent dry development depends on the sificon distribution after silylatlon and the quality of the transfer of this silic
Publikováno v:
SPIE Proceedings.
In surface imaging, dry developed resist systems, based on gas phase silylation, profiles are mainly determined by the silicon distribution between the exposed and the unexposed areas in the upper part of the resist, and by the dry etching process th
Autor:
Anne-Marie Goethals, David N. Nichols, Luc Van den Hove, Ria Lombaerts, Maaike Op de Beeck, Ki-Ho Baik, Bruno Roland, P. De Geyter
Publikováno v:
SPIE Proceedings.
The DESIRE1,2 process is based on selective silylation and subsequent dry development. A problem with silylation of resists is the volume expansion3 of the resist image, which results in pattern deformation and displacement of small features near lar
Publikováno v:
SPIE Proceedings.
Design rules for the next generation of VLSI and ULSI devices will routinely require the plasma etching of sub-micron geometries. These requirements will create even greater challenges for the exposure and devolopment of photoresist on reflective and
Publikováno v:
Advances in Resist Technology and Processing VI.
Surface-imaging schemes are an attractive alternative to overcome many of the limitations optical microlithography is presently facing. A good example of this type of approach is the so-called DESIRE process. A preliminary performance characterizatio