Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Reynes, Jean Michel"'
Autor:
Oliveira, Joao1 (AUTHOR) jean-michel.reynes@irt-saintexupery.com, Reynes, Jean-Michel1 (AUTHOR) pascal.frey@irt-saintexupery.com, Morel, Hervé2 (AUTHOR) herve.morel@insa-lyon.fr, Frey, Pascal1 (AUTHOR) o.perrotin@altertechnology.fr, Perrotin, Olivier1,3 (AUTHOR) laurence.allirand@vitesco.com, Allirand, Laurence1,4 (AUTHOR) stephane.azzopardi@safrangroup.com, Azzopardi, Stéphane1,5 (AUTHOR) michel.piton@alstomgroup.com, Piton, Michel1,6 (AUTHOR) fabio.coccetti@irt-saintexupery.com, Coccetti, Fabio1 (AUTHOR)
Publikováno v:
Energies (19961073). Nov2024, Vol. 17 Issue 21, p5476. 20p.
Autor:
Hamad, Hassan, Tournier, Dominique, Reynes, Jean-Michel, Perrotin, Olivier, Trémouilles, David, Meuret, Régis, Planson, Dominique, Morel, Hervé
Publikováno v:
In Microelectronics Reliability December 2023 151
Akademický článek
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Publikováno v:
IEEE THERMINIC 2020
IEEE THERMINIC 2020, Fraunhofer Berlin, Sep 2020, Berlin, Germany
IEEE THERMINIC 2020, Fraunhofer Berlin, Sep 2020, Berlin, Germany
International audience; As Silicon-based semiconductors approach their limits in different areas, wide bandgap devices, such as Silicon Carbide components, offer an excellent alternative in many applications. Recently, SiC MOSFETs are replacing Si-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::77926755eca2517bcab2dba944a2b8fa
https://hal.laas.fr/hal-03655865
https://hal.laas.fr/hal-03655865
Publikováno v:
In Microelectronics Reliability 2003 43(4):571-576
Autor:
Favre, Jacques, Reynes, Jean-Michel, Fradin, Jean-Pierre, Cadile, Claudia, Sanchez, Sébastien, Elzo, Dominique, Marcault, Emmanuel
Double side cooling and wire-bondless interconnections are envisioned as ways to go for Electronic Power Modules. aPSI3D has developed an integrated approach for the design of such a power module. Prototypes have been manufactured and characterized i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5c38250d19aaafb512584f529a725866
https://oatao.univ-toulouse.fr/18238/
https://oatao.univ-toulouse.fr/18238/
Publikováno v:
In Materials Science & Engineering B 1 September 2012 177(15):1362-1366
Autor:
Théolier, Loïc, Isoird, Karine, Tranduc, Henri, Morancho, Frédéric, Roig Guitart, Jaume, Weber, Yann, Stefanov, E.N., Reynes, Jean Michel
Publikováno v:
8th International Seminar on Power Semiconductors (ISPS'06
8th International Seminar on Power Semiconductors (ISPS'06, Aug 2006, Pragues, Czech Republic. pp.117-122
8th International Seminar on Power Semiconductors (ISPS'06, Aug 2006, Pragues, Czech Republic. pp.117-122
International audience; In this paper, the switching performance of 65 Volts vertical N-channel FLYMOSFETs is investigated for the first time and compared to a conventional VDMOSFET. It is shown that measurements of the different capacitances and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ac06da6fe115a1ac9fd674d70ca8f44e
https://hal.archives-ouvertes.fr/hal-01005674/document
https://hal.archives-ouvertes.fr/hal-01005674/document
Autor:
Alves, Stéphane, Morancho, Frédéric, Reynes, Jean Michel, Margherita, J., Deram, I., Isoird, Karine
Publikováno v:
Electronique de Puissance du Futur (SAAEI-EPF'04)
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur, Sep 2004, TOULOUSE, France. pp.4 PAGES
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur, Sep 2004, TOULOUSE, France. pp.4 PAGES
National audience; Dans ce papier, le concept des "îlots flottants" a été implémenté sur silicium : pour la première fois une FLIDiode a été fabriquée. Les résultats expérimentaux confirment les simulations prédictives 2D : cette nouvelle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ee4fb101de9b9b24d78f647016c2ff1d
https://hal.archives-ouvertes.fr/hal-01002131
https://hal.archives-ouvertes.fr/hal-01002131
Autor:
Alves, Stéphane, Morancho, Frédéric, Reynes, Jean Michel, Margherita, J., Deram, I., Isoird, Karine
Publikováno v:
7th International Seminar on Power Semiconductors (ISPS'04)
7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50
7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50
International audience; In this paper, the "FLoating Island" concept has been implemented on silicon: a FLIDiode has been built for the first time. Experimental results confirm the predictive 2D simulations: this new diode exhibits an important break
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d625320fa855ec82990b6abb43100187
https://hal.archives-ouvertes.fr/hal-01005655/document
https://hal.archives-ouvertes.fr/hal-01005655/document