Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Revaz G. Melkadze"'
Autor:
Tatiana Sakharova, Lado Jibuti, Revaz G. Melkadze, Zurab Jibuti, Michael Heuken, Nina Khuchua, Marina Tigishvili, Nugzar Dolidze
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-6
A new technique is proposed, verified, and described for measuring photosensitivity spectra of semiconductor materials and devices in the wavelength range of 200–4100 nm utilizing an innovative setup termed “Polychromator” with a system of cut-
Autor:
Marina Tigishvili, Nodar Gapishvili, Galina Davbeshko, V. Romanyuk, Nugzar Dolidze, Revaz G. Melkadze, Nina Khuchua, Zurab Jibuti
Publikováno v:
Solid State Phenomena. 242:374-379
For specific modification of the fundamental optical and photoelectrical properties of silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses of 1 х 1013 cm-2–1 х 1015 cm-2 followed by anneal
Autor:
Revaz G. Melkadze
Publikováno v:
Health. :1226-1231
The balm “Graal” (BG) was created within the limits of transnational program “Chernobil Help”. It includes the water-spirit secretion pressed out from the feed-curative plants of Caucasus as well as mountain honey, pollen of the Georgian beer
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Concentrated photovoltaic (CPV) is an important player in R&D and industrial technologies for cost-effective large-scale power plants. The developers' efforts are aimed at increasing the solar cell efficiency and improving optical concentrators to re
Autor:
Tatiana Sakharova, Zurab Jibuti, G. Peradze, Nodar Gapishvili, Nina Khuchua, Nugzar Dolidze, Revaz G. Melkadze, Marina Tigishvili
Publikováno v:
physica status solidi c. 14:1700094
The optical and electrical characteristics of p–n photodiodes based on monocrystalline n-Si (wafers with ρ = 70 and 10 Ohm · cm and SOI) implanted with B+ in the dose range of 1 × 1014–1 × 1015 сm−2 and annealed at 900 °C (20 min) are stu
Autor:
Givi D. Kalandadze, Revaz G. Melkadze, Tilo Baumbach, Michael Kroening, Axel Berthold, Tatiana M. Lezhneva, Levan B. Khvedelidze
Publikováno v:
Sensor Systems and Networks: Phenomena, Technology, and Applications for NDE and Health Monitoring 2007.
A tremendous development in the field of imaging radiation detectors has taken place in the last decade. Conventional X-ray film has been replaced by digital X-ray imaging systems in a number of ways. Such systems mainly consist of silicon charge cou
Autor:
Axel Berthold, T. M. Lezhneva, Igor Besse, L. B. Khvedelidze, Tilo Baumbach, G. D. Kalandadze, Michael Kroening, Revaz G. Melkadze
Publikováno v:
SPIE Proceedings.
For the last decade a tremendous development in the field of imaging radiation detectors has taken place. Conventional X-ray film has been replaced by digital X-ray imaging systems in a number of ways. Such systems mainly consist of silicon charge co
Autor:
Roland Diehl, Givi D. Kalandadzes, Zauri D. Chakhnakia, Albert A. Tutunjan, Nina A. Tutunjan, Nina Khuchua, Revaz G. Melkadze, Levan Khvedelidze
Publikováno v:
SPIE Proceedings.
Possibilities of gallium arsenide technology in Georgia to fabricate microelectronic devices are described. Characteristics of technological processes and parameters of active and passive components for digital and analog IC's are given. A concept of
Publikováno v:
SPIE Proceedings.
To develop reliable intercomponent insulation methods to fabricate devices and IC's based on GaAs multiplayer heterostructures the formation of high-resistivity regions in these structures by selective F+ and B+ ion implantation is studied. The impla
Autor:
Zauri D. Chakhnakia, G. Peradze, Levan Khvedelidze, Zacharias Hatzopoulos, Nina Khuchua, Tatiana Sakharova, Revaz G. Melkadze
Publikováno v:
SPIE Proceedings.
Molecular-beam - grown epitaxy heterostructure field-effect transistors employing a delta-doped channel have been fabricated and investigated. The results of studies of DC parameters of δ-FET's of different configuration can be regarded as the best