Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Reuel B. Liebert"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:365-371
Advances in reducing the sizes of device structures and line widths place increasing demands on the accuracy of dopant placement and the control of dopant motion during activation anneals. Serial process high current ion implantation systems seek to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152290a745b6f38bd7e7a9210e354afd
https://doi.org/10.1016/j.nimb.2005.05.037
https://doi.org/10.1016/j.nimb.2005.05.037
Publikováno v:
Surface and Coatings Technology. 156:229-236
Pulsed plasma doping (P 2 LAD) is an alternate doping technique for the formation of ultra-shallow junctions in silicon wafers. In the P 2 LAD technique, a pulsed negative voltage applied to the silicon substrate creates a plasma containing the desir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8e0117a6df94136eca8a8a17365550f
https://doi.org/10.1016/s0257-8972(02)00097-x
https://doi.org/10.1016/s0257-8972(02)00097-x
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:77-81
Wafer charging during high current implantation has been one of the major concerns to implanter users not only because of ever-shrinking device structures, but especially because of two to three-fold increases of beam currents available on next-gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b4ba852aeb18b7c74877948d273bff
https://doi.org/10.1016/0168-583x(91)96139-c
https://doi.org/10.1016/0168-583x(91)96139-c
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:71-76
The rapid development of higher-density device structures in recent years has focussed increased attention on all defect-producing by-products of the ion implantation process. In the past, the well-known effects of alkali and transition metals have c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a0e29d23f7247ba6986545411d26e19
https://doi.org/10.1016/0168-583x(91)96138-b
https://doi.org/10.1016/0168-583x(91)96138-b
Autor:
Reuel B. Liebert, Daniel F. Downey
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:49-54
High-current BF2+ implants have been studied under various implant conditions, extraction and acceleration voltages, and vacuum conditions to determine the critical controls required to eliminate (or minimize) dissociation of BF2+ during ion implanta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6f124ad15573187baa47dc08b321cb
https://doi.org/10.1016/0168-583x(91)96134-7
https://doi.org/10.1016/0168-583x(91)96134-7
Autor:
Steven R. Walther, Reuel B. Liebert, D. Lenoble, E.A. Arevalo, S.B. Felch, A. Grouillet, Z. Fang, Bon-Woong Koo
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
As device manufacturers consider the use of pulsed plasma doping (PLAD) for production doping, they are becoming concerned about insertion of the PLAD process into their present process flows. In particular, they need to be confident that an annealed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d20df534b0f9bcfbf61cb31e1145b432
https://doi.org/10.1109/iit.2000.924194
https://doi.org/10.1109/iit.2000.924194
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
A system for accurate and repeatable implant dose measurement for plasma doping architectures must circumvent a number of possible pitfalls. Such a system must accurately count ions crossing the pulsed plasma sheath to the wafer surface, while that s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c494afdfae64e19ddba2d9133dcfa83
https://doi.org/10.1109/iit.2000.924195
https://doi.org/10.1109/iit.2000.924195
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
A plasma doping system has been built for 200 and 300 mm wafer implantation in the 80-10,000 volt range. The architecture and operational performance of the tool is described and results are shown for dose accuracy, wafer charge and contamination con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56a1c23f841dfee02c0ff0b0d73f3538
https://doi.org/10.1109/iit.2000.924190
https://doi.org/10.1109/iit.2000.924190
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
We discuss measurements and modeling associated with the high current ion beam space charge neutralization. We show the importance of the electron temperature in maintaining low beam potential and induced voltage on implanted wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc9a0c9f7940dceb812ea19670cf06d
https://doi.org/10.1109/iit.2000.924218
https://doi.org/10.1109/iit.2000.924218
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
Pulsed plasma doping offers a number of compelling benefits for low energy implantation, such as throughput, simplicity and low risk to wafers. The compromise to plasma-based doping systems is the absence of mass selection and increased sensitivity t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78afcd1591bfea9346c808b642cc0e9e
https://doi.org/10.1109/iit.2000.924197
https://doi.org/10.1109/iit.2000.924197