Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Retsu Oiwa"'
Autor:
Retsu Oiwa
Publikováno v:
Vacuum and Surface Science. 61:586-591
Publikováno v:
Journal of Surface Analysis. 25:25-33
Autor:
Retsu Oiwa, Takashi Sekiguchi
Publikováno v:
Vacuum and Surface Science. 63:552-553
Publikováno v:
Hyomen Kagaku. 37:173-177
Publikováno v:
Hyomen Kagaku. 25:217-223
Publikováno v:
Applied Surface Science. :318-322
The use of ultra-low-energy SIMS for characterizing the shallow implants, such as boron and arsenic, is now widely employed. This article investigates the repeatability of SIMS analysis in shallow depth profile during a 6-month period. Using ultra-lo
Publikováno v:
Applied Surface Science. :323-328
Shallow arsenic implants and extra-thin film (SiON) are routinely analyzed by modem SIMS under ultra-low-energy Cs + ion beam bombardment, either at oblique (
Autor:
Hideki Yoshikawa, Retsu Oiwa, Masato Okui, Masami Taguchi, Nobuhiro Yagi, Masaru Kitamura, Sei Fukushima, Vlaicu A. Mihai, Masahiro Kimura, Yoshiteru Kita, Katsumi Watanabe, Atsushi Nisawa, Akihiro Tanaka
Publikováno v:
Journal of Surface Analysis. 9:374-377
The 3rd generation synchrotron radiation (SR) facilities have been recently built and have given us high flux and wide-energy tunable X-ray. This characteristic is useful to obtain XPS spectra excited by the high energy X-ray, which reveals the deepe
Publikováno v:
Hyomen Kagaku. 20:791-798
Unintended degradation of specimens during X-ray irradiation is a very important phenomenon in quantifying the surfaces using X-ray photoelectron spectroscopy. However, there has been no practical method for quantitative evaluation of the degradation
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 362:254-257
In quantitative XPS, the preparation of reference samples is difficult or impossible, and the correction factor method has been employed. Therefore, a convenient and practical procedure to get correction factors to estimate atomic ratios is proposed,