Zobrazeno 1 - 10
of 12 207
pro vyhledávání: '"Resistive Switching"'
Autor:
Hao Chen, Zhihao Shen, Wen-Tao Guo, Yan-Ping Jiang, Wenhua Li, Dan Zhang, Zhenhua Tang, Qi-Jun Sun, Xin-Gui Tang
Publikováno v:
Journal of Materiomics, Vol 10, Iss 6, Pp 1308-1316 (2024)
Recently, memristors have garnered widespread attention as neuromorphic devices that can simulate synaptic behavior, holding promise for future commercial applications in neuromorphic computing. In this paper, we present a memristor with an Au/Bi3.2L
Externí odkaz:
https://doaj.org/article/b3c1b85e8ea945999329872e476d9363
Autor:
Biswajit Jana, Ayan Roy Chaudhuri
Publikováno v:
Chips, Vol 3, Iss 3, Pp 235-257 (2024)
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-f
Externí odkaz:
https://doaj.org/article/a13652f89b864266af10716b79bce6be
Autor:
Andrzej Sławek, Lulu Alluhaibi, Ewelina Kowalewska, Gisya Abdi, Tomasz Mazur, Agnieszka Podborska, Krzysztof Mech, Marianna Marciszko‐Wiąckowska, Alexey Maximenko, Konrad Szaciłowski
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 12, Pp n/a-n/a (2024)
Abstract In this work, a family of Ni‐based dibenzotetraaza[14]annulene (dtaa) complexes are investigated for their application in memristors (memory resistors). A series of four Ni(II) complexes with different peripheral substituents of the dtaa l
Externí odkaz:
https://doaj.org/article/beb7eaaacfd6460fa229bbfd35bb1407
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 4, Pp 100813- (2024)
The emergence of the big data era has led to enormous demand for memory devices that are low cost, flexible, fabrication friendly, transparent, energy efficient, and have a higher density. Resistive random-access memory (RRAM) is an outstanding emerg
Externí odkaz:
https://doaj.org/article/904430b946ba48448e012652aadf3e72
Autor:
Tohru Tsuruoka, Kazuya Terabe
Publikováno v:
Science and Technology of Advanced Materials, Vol 25, Iss 1 (2024)
ABSTRACTAs miniaturization of semiconductor memory devices is reaching its physical and technological limits, there is a demand for memory technologies that operate on new principles. Atomic switches are nanoionic devices that show repeatable resisti
Externí odkaz:
https://doaj.org/article/38f17c318bb94f6d9a819e283516a6c8
Autor:
Aleksandra Koroleva, Thoai‐Khanh Khuu, César Magén, Hervé Roussel, Carmen Jiménez, Céline Ternon, Elena‐Ioana Vatajelu, Mónica Burriel
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The rapid development of brain‐inspired computing requires new artificial components and architectures for its hardware implementation. In this regard, memristive devices emerged as potential candidates for artificial synapses because of t
Externí odkaz:
https://doaj.org/article/8aef923f488d44418027af739cddbaa1
Publikováno v:
Nano Convergence, Vol 11, Iss 1, Pp 1-20 (2024)
Abstract Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge tra
Externí odkaz:
https://doaj.org/article/de0fc83be1914918a14b196bac5e0ea2
Akademický článek
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Publikováno v:
In Journal of Alloys and Compounds 5 January 2025 1010
Publikováno v:
In Ceramics International January 2025 51(1):541-554