Zobrazeno 1 - 10
of 54 345
pro vyhledávání: '"Resistive Switching"'
Autor:
Kaushik, Divya, Kumar, Nitin, Sharma, Harshit, Prajapat, Pukhraj, V., Mehamalini, Sambandamurthy, G., Srivastava, Ritu
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic and inorgani
Externí odkaz:
http://arxiv.org/abs/2501.01822
A finite element model consisting of a conducting filament with or without a gap was used to reproduce behavior of TaO$_x$-based resistive switching devices. The specific goal was to explore the range of possible filament parameters such a filament d
Externí odkaz:
http://arxiv.org/abs/2411.14970
Publikováno v:
Mathematics and Computers in Simulation, Volume 223, 2024, 288-298
This paper is motivated by modeling the cycle-to-cycle variability associated with the resistive switching operation behind memristors. As the data are by nature curves, functional principal component analysis is a suitable candidate to explain the m
Externí odkaz:
http://arxiv.org/abs/2411.12366
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at room temperat
Externí odkaz:
http://arxiv.org/abs/2411.06605
Autor:
Kaneda, Masaya, Tsuruoka, Shun, Shinya, Hikari, Fukushima, Tetsuya, Endo, Tatsuro, Tadano, Yuriko, Takeda, Takahito, Masago, Akira, Tanaka, Masaaki, Katayama-Yoshida, Hiroshi, Ohya, Shinobu
Memristors, which are characterized by their unique input-voltage-history-dependent resistance, have garnered significant attention for the exploration of next-generation in-memory computing, reconfigurable logic circuits, and neural networks. Memris
Externí odkaz:
http://arxiv.org/abs/2411.04355
Autor:
Yu, Zhiqiang1,2 (AUTHOR) 221076997@stdmail.gxust.edu.cn, Wang, Qingcheng1 (AUTHOR) 221077051@stdmail.gxust.edu.cn, Jia, Jinhao1 (AUTHOR) 221077056@stdmail.gxust.edu.cn, Kang, Wenbo1 (AUTHOR) oumlian@mail2.sysu.edu.cn, Ou, Meilian1 (AUTHOR), Xu, Zhimou2 (AUTHOR)
Publikováno v:
Molecules. Dec2024, Vol. 29 Issue 23, p5604. 12p.
Autor:
Tahouni-Bonab, Farnaz, Hepting, Matthias, Luibrand, Theodor, Cristiani, Georg, Schmid, Christoph, Logvenov, Gennady, Keimer, Bernhard, Kleiner, Reinhold, Koelle, Dieter, Guénon, Stefan
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film devices of these
Externí odkaz:
http://arxiv.org/abs/2410.20521