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pro vyhledávání: '"Resistive RAM"'
Akademický článek
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Publikováno v:
Electronics Letters, Vol 60, Iss 6, Pp n/a-n/a (2024)
Abstract This letter presented a symmetric 8T2R NVSRAM with autosave function. By efficiently multiplexing the node voltages, the control of the nonvolatile memristor and the isolation of the data node from the memristor are achieved, which ensures a
Externí odkaz:
https://doaj.org/article/9b29537a064e4e599dd2f9fae4cb9ace
Publikováno v:
Electronics Letters, Vol 60, Iss 5, Pp n/a-n/a (2024)
Abstract For the first time, a physics‐based modelling of a nanoscale Ni/Mo/MoO3/Ni memristor is presented in this letter by inserting a ‘Mo:Capping layer’ between the top electrode (Ni) and the insulating layer (MoO3). The proposed memristor h
Externí odkaz:
https://doaj.org/article/01616a3ffc9f4c28b795d7b4707db52e
Publikováno v:
Nanomaterials, Vol 14, Iss 8, p 668 (2024)
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications. For these applications, RRAM elements are arranged into Crossb
Externí odkaz:
https://doaj.org/article/00368326c5894b79ba32788b479001f4
Autor:
Jiabao Ye, Xuecheng Cui, Haoxiong Bi, Jifang Cao, Wannian Wang, Xiaoxin Xu, Dong Liu, Bing Chen
Publikováno v:
Electronics Letters, Vol 59, Iss 19, Pp n/a-n/a (2023)
Abstract In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit. Simulation results demonstrate the feasibility and eff
Externí odkaz:
https://doaj.org/article/d875ec740cc143c2afdfb1bc30a741cf
Publikováno v:
IEEE Access, Vol 11, Pp 51260-51269 (2023)
Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innova
Externí odkaz:
https://doaj.org/article/b1d5e91b186b4355a71ed8261e79e2da
Autor:
Bartłomiej Garda, Karol Bednarz
Publikováno v:
Energies, Vol 17, Iss 2, p 467 (2024)
Memristors have garnered considerable attention within the scientific community as devices for emerging construction of Very Large Scale Integration (VLSI) systems. Owing to their inherent properties, they appear to be promising candidates for pivota
Externí odkaz:
https://doaj.org/article/bcc3c4352249445a822134b7b81dd6d5
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause
Externí odkaz:
https://doaj.org/article/3182de2ceccd48a8a19345ddb1bf23a0
Publikováno v:
IEEE Access, Vol 10, Pp 125112-125135 (2022)
Training a CNN involves computationally intense optimization algorithms to fit the network using a training dataset, to update the network weight for inferencing and then pattern classification. Hence, the application of in-memory computation would e
Externí odkaz:
https://doaj.org/article/2c64a3480c9f43449ae141fb206807d9
Autor:
Taylor Wilson, Bertrand Cambou
Publikováno v:
Frontiers in Nanotechnology, Vol 4 (2022)
In this paper, we present the characterization of pre-formed resistive random access memories to design physical unclonable functions and experimentally validate inherent properties such as tamper sensitivity and a self-destroy mode. The physical unc
Externí odkaz:
https://doaj.org/article/64d2bea5270b499f962b778756a0f4df