Effect of Different ALD Al2O3 Oxidants on the Surface Passivation of Black Silicon

Autor: Repo, Päivikki, Savin, Hele

Publikováno v: In Energy Procedia August 2016 92:381-385

N-type Black Silicon Solar Cells

Autor: Repo, Päivikki, Benick, Jan, Vähänissi, Ville, Schön, Jonas, von Gastrow, Guillaume, Steinhauser, Bernd, Schubert, Martin C., Hermle, Martin, Savin, Hele

Publikováno v: In Energy Procedia 2013 38:866-871

Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Autor: Ott, Jennifer, Pasanen, Toni, Repo, Päivikki, Seppänen, Heli, Vähänissi, Ville, Savin, Hele

Silicon radiation and particle detectors are traditionally passivated with thermal silicon dioxide. It has been shown that aluminium oxide (Al2O3) films provide better surface passivation due to their high negative charge, but studies on Al2O3 surfac

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https://aaltodoc.aalto.fi/handle/123456789/43114

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High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates

Autor: Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X, Calle, Eric, von Gastrow, Guillaume, Repo, Päivikki, Carrió, David, Savin, Hele, Alcubilla, Ramón

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)

This work demonstrates the high potential of Al2O3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, belo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2c6bd53c0f4b72e334601f8b65c82a61
https://hdl.handle.net/2117/78512