Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Renze Yu"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 887-899 (2023)
While SiC MOSFETs are now being utilized in industry their robustness under heavy-duty applications still remains a concern. In this paper, the results of experimental measurements of degradation to failure of different structured SiC power MOSFETs,
Externí odkaz:
https://doaj.org/article/d37810fc454c44ee845e6e226f8b9b3a
Publikováno v:
Micromachines, Vol 10, Iss 5, p 314 (2019)
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct curr
Externí odkaz:
https://doaj.org/article/5245caef1400401db26948e913c62f3f
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:6329-6343
A press pack insulated gate bipolar transistor (PP IGBT) device consists of multiple materials. Under the influence of alternating current and clamping force, the device suffers from complex thermomechanical stress. However, the experience-based pack
Autor:
Renze Yu, Saeed Jahdi, Phil Mellor, Juefei Yang, Chengjun Shen, Li Liu, Olayiwola Alatise, Jose Ortiz-Gonzalez
Publikováno v:
Yu, R, Jahdi, S, Mellor, P H, Yang, J, Shen, C, Liu, L, Alatise, O & Ortiz-Gonzalez, J 2022, Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs . in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) . Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22 . https://doi.org/10.1109/WiPDAEurope55971.2022.9936284
In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aa856df8ff3260d29e6e5d6eae44ebe
https://research-information.bris.ac.uk/ws/files/345994574/2022157255.pdf
https://research-information.bris.ac.uk/ws/files/345994574/2022157255.pdf
Autor:
Yasin Gunaydin, Saeed Jahdi, Xibo Yuan, Renze Yu, Chengjun Shen, Sai Priya Munagala, Andrew Hopkins, Nick Simpson, Mana Hosseinzadehlish, Jose Ortiz-Gonzalez, Olayiwola Alatise
Publikováno v:
Gunaydin, Y, Jahdi, S, Yuan, X, Yu, R, Shen, C, Munagala, S P, Hopkins, A N, Simpson, N, Hosseinzadehlish, M, Ortiz-Gonzalez, J & Alatise, O 2022, ' Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures ', Microelectronics Reliability, vol. 138, 114711 . https://doi.org/10.1016/j.microrel.2022.114711
In this paper, the ruggedness performance of GaN HEMT and SiC JFET devices in cascode configuration with a low voltage silicon power MOSFET has been evaluated experimentally. The impact of the bus voltage on the drain current and avalanche energy are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6400008601d2f6055c18ee5e550ddbb8
https://research-information.bris.ac.uk/en/publications/d899a4a9-a2f2-41d9-b63f-85bf614c6c42
https://research-information.bris.ac.uk/en/publications/d899a4a9-a2f2-41d9-b63f-85bf614c6c42
Publikováno v:
Gunaydin, Y, Jahdi, S, Yuan, X, Yang, J, Yu, R & Stark, B H 2022, Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules . in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) . Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22 . https://doi.org/10.1109/WiPDAEurope55971.2022.9936254
In this digest, the threshold voltage drift of the GaN cascode power modules is analysed in comparison with similarly-rated Silicon power MOSFET modules under a range of electrothermal gate bias stress. The drift is plotted again a range of gate volt
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:1611-1621
Crosstalk in a phase-leg configuration significantly limits the high switching speed performance of silicon carbide (SiC) MOSFET due to their lower threshold voltage and higher allowable negative gate voltage as compared with the traditional silicon
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 10:184-187
In order to improve the heat dissipation capability of high-power press-pack insulated gate bipolar transistor (PP-IGBT), the nanosilver paste was utilized to package a single 3.3-kV/50-A PP-IGBT chip; we called it sintered pack IGBT (SP-IGBT) in thi
Autor:
Chengjun Shen, Renze Yu, Saeed Jahdi, Phil Mellor, Sai Priya Munagala, Andrew Hopkins, Nick Simpson, Jose Ortiz-Gonzalez, Olayiwola Alatise
Publikováno v:
Shen, C, Yu, R, Jahdi, S, Mellor, P H, Munagala, S P, Hopkins, A N, Simpson, N, Ortiz-Gonzalez, J & Alatise, O 2022, ' FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes ', Microelectronics Reliability, vol. 138, 114686 . https://doi.org/10.1016/j.microrel.2022.114686
Through comprehensive experimental measurements and TCAD simulation, it is shown that the avalanche ruggedness of SiC MPS & JBS diodes outperforms that of closely rated Silicon PiN diodes taking advantage of the wide-bandgap properties of SiC which l
Publikováno v:
2020 4th International Conference on HVDC (HVDC).
Silicon Carbide (SiC) Metallic Oxide Semiconductor Field Effect Transistor (MOSFET) has fast switching speed and under unclamped inductive switching (UIS) environment, the device may suffer from avalanche breakdown. In this occasion, it is necessary