Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Renqiang Zhu"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 318-321 (2024)
This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 $\
Externí odkaz:
https://doaj.org/article/ba973af1a55f4af3988a3ac38c75d29c
Autor:
Xinke Liu, Bo Li, Junye Wu, Jian Li, Wen Yue, Renqiang Zhu, Qi Wang, Xiaohua Li, Jianwei Ben, Wei He, Hsien-Chin Chiu, Ke Xu, Ze Zhong
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 34-38 (2024)
In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices wa
Externí odkaz:
https://doaj.org/article/79609d040551497caca4c2378ca79524
Publikováno v:
IEEE Electron Device Letters. 43:346-349
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ed1e642b2127e77743dda8424f00913
https://doi.org/10.1109/led.2022.3146276
https://doi.org/10.1109/led.2022.3146276
Publikováno v:
IEEE Electron Device Letters. 42:970-973
In this letter, we report the influence of p-GaN body doping concentration on the ON-state performance of vertical GaN trench MOSFETs. Decreasing the p-GaN body doping concentration leads to an enhanced maximum drain current ( ${I} _{D,\max}$ ), redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73782c2fa551d8fe851f193cffa97e26
https://doi.org/10.1109/led.2021.3080260
https://doi.org/10.1109/led.2021.3080260
Publikováno v:
IEEE Transactions on Electron Devices. 68:653-657
In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage ( ${V}_{BR}$ ) and excellent saturation drain current. Benefiting from the optimized material growth of high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f79bfec4f30f635215ad588483b859e
https://doi.org/10.1109/ted.2020.3043213
https://doi.org/10.1109/ted.2020.3043213
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58780d53d9eb2efde0255fa0e7118a10
https://doi.org/10.1109/csw55288.2022.9930472
https://doi.org/10.1109/csw55288.2022.9930472
Publikováno v:
Applied Physics Express. 15:121004
This work reports GaN quasi-vertical trench MOSFETs grown on 6-inch Si substrates. The device with single-trench design shows a specific ON-resistance of 0.84 mΩ·cm2, a maximum drain current density of 5.0 kA cm−2, and a breakdown voltage of 320
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d811d8926ce3d9a20d6be3fbadc2384d
https://doi.org/10.35848/1882-0786/aca26e
https://doi.org/10.35848/1882-0786/aca26e
Publikováno v:
IEEE Electron Device Letters. 40:530-533
In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs after forward gate breakdown. Benefitting from the red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d1f5475fb546e44921674d8cc008cf
https://doi.org/10.1109/led.2019.2897694
https://doi.org/10.1109/led.2019.2897694
Publikováno v:
Applied Physics Letters. 120:242104
Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance ( RON) to minimize power loss, high output current ( ION) to maximize driving capability, and large threshold voltage ( Vth) to av
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cebc15d66dd87f35d4d070ad16b15367
https://doi.org/10.1063/5.0088251
https://doi.org/10.1063/5.0088251