Zobrazeno 1 - 1
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pro vyhledávání: '"Renee E. Nieh"'
Publikováno v:
Journal of Electronic Materials. 32:184-190
A nickel silicide process for Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloy materials compatible with Si technology has been developed. Low-resistivity-phase (12–20 µΘ cm) nickel silicides have been obtained for these alloys with different low sheet-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60aaf6d5ec504993911ffb565615adf0
https://doi.org/10.1007/s11664-003-0191-2
https://doi.org/10.1007/s11664-003-0191-2
