Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Renee E. Nieh"'
Publikováno v:
Journal of Electronic Materials. 32:184-190
A nickel silicide process for Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloy materials compatible with Si technology has been developed. Low-resistivity-phase (12–20 µΘ cm) nickel silicides have been obtained for these alloys with different low sheet-
Autor:
Onishi, Katsunori, Choi, Rino, Chang Seok Kang, Hag-Ju Cho, Young Hee Kim, Nieh, Renee E., Jeong Han, Krishnan, Siddharth A., Akbar, Mohammad Shahariar, Lee, Jack C.
Publikováno v:
IEEE Transactions on Electron Devices; Jun2003, Vol. 50 Issue 6, p1517, 8p, 9 Black and White Photographs, 1 Diagram, 15 Graphs
Autor:
Nieh, Renee E., Kang, Chang Seok, Hag-Ju Cho, Onishi, Katsunori, Choi, Rino, Krishnan, Siddarth, Jeong Hee Han, Young-Hee Kim, Akbar, Mohammad S., Lee, Jack C.
Publikováno v:
IEEE Transactions on Electron Devices; Feb2003, Vol. 50 Issue 2, p333, 8p, 5 Black and White Photographs, 2 Diagrams, 15 Graphs
Autor:
Onishi, Katsunori, Chang Seok Kang, Rino Choi, Hag-Ju Cho, Gopalan, Sundar, Nieh, Renee E., Krishnan, Siddharth A., Lee, Jack C.
Publikováno v:
IEEE Transactions on Electron Devices; Feb2003, Vol. 50 Issue 2, p384, 7p, 8 Black and White Photographs, 1 Chart, 17 Graphs
Autor:
Yang-Yu Fan, Nieh, Renee E., Lee, Jack C., Lucovsky, Gerry, Brown, George A., Register, Leonard Frank, Banerjee, Sanjay K.
Publikováno v:
IEEE Transactions on Electron Devices; Nov2002, Vol. 49 Issue 11, p1969, 10p, 1 Diagram, 1 Chart, 9 Graphs
Publikováno v:
Journal of Physics: Conference Series; 2008, Vol. 100 Issue 4, p1-1, 1p
THERMEC 2006, 5th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, July 4-8, 2006, Vancouver, Canada