Zobrazeno 1 - 10
of 533
pro vyhledávání: '"Renault, O"'
Autor:
Sant, R., Gay, M., Marty, A., Lisi, S., Harrabi, R., Vergnaud, C., Dau, M. T., Weng, X., Coraux, J., Gauthier, N., Renault, O., Renaud, G., Jamet, M.
Publikováno v:
npj 2D Materials and Applications (2020) 4:41
Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a no
Externí odkaz:
http://arxiv.org/abs/2009.08706
Autor:
Dau, M. T., Vergnaud, C., Gay, M., Alvarez, C. J., Marty, A., Beigné, C., Jalabert, D., Jacquot, J. -F., Renault, O., Okuno, H., Jamet, M.
Publikováno v:
APL Materials 7, 051111 (2019)
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bo
Externí odkaz:
http://arxiv.org/abs/1906.04801
Autor:
Vergnaud, C., Gay, M., Alvarez, C., Dau, M. -T., Pierre, F., Jalabert, D., Licitra, C., Marty, A., Beigné, C., Grévin, B., Renault, O., Okuno, H., Jamet, M.
Publikováno v:
2D Mater. 6, 035019 (2019)
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magneti
Externí odkaz:
http://arxiv.org/abs/1906.03014
Publikováno v:
In Applied Surface Science 30 January 2023 609
Autor:
Mathieu, C., Conrad, E. H., Wang, F., Rault, J. E., Feyer, V., Schneider, C. M., Renault, O., Barrett, N.
Publikováno v:
Surface and Interface Analysis 46, 1268 (2014)
We investigate electronic band-structure images in reciprocal space of few layer graphene epitaxially grown on SiC(000-1). In addition to the observation of commensurate rotation angles of the graphene layers, the k-space images recorded near the Fer
Externí odkaz:
http://arxiv.org/abs/1806.06559
Autor:
Renault, O., Pascon, A. M., Rotella, H., Kaja, K., Mathieu, C., Rault, J. E., Blaise, P., Poiroux, T., Barrett, N., Fonseca, L. R. C.
Publikováno v:
Journal of Physics D: Applied Physics 47, 295303 (2014)
We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission microscopy (XPEEM) are combined with ab initio Density Functional Theo
Externí odkaz:
http://arxiv.org/abs/1806.04908
Autor:
Barrett, N., Rault, J., Krug, I., Vilquin, B., Niu, G., Gautier, B., Albertini, D., Renault, O.
Publikováno v:
Surace and Interface Analysis, 42 1690-1694 (2010)
Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic structure
Externí odkaz:
http://arxiv.org/abs/1806.01503
Publikováno v:
J. Phys.: Condens. Matter 21 314015 2009
An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spati
Externí odkaz:
http://arxiv.org/abs/1703.10298
Autor:
Dau, M. T., Vergnaud, C., Marty, A., Rortais, F., Beigné, C., Boukari, H., Bellet-Amalric, E., Guigoz, V., Renault, O., Alvarez, C., Okuno, H., Pochet, P., Jamet, M.
Publikováno v:
Appl. Phys. Lett. 110, 011909 (2017)
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substr
Externí odkaz:
http://arxiv.org/abs/1702.05121
Autor:
Bouschet, M., Martinez, E., Fabbri, J.M., Casiez, L., Quintero, A., Da Fonseca, J., Jany, C., Rodriguez, P., Chelnokov, A., Hartmann, J.M., Reboud, V., Renault, O.
Publikováno v:
In Microelectronic Engineering 15 January 2022 253