Zobrazeno 1 - 10 of 66 pro vyhledávání: '"Renato Giacomini"'
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Akademický článek
Performance Prediction of a 4WD High-Performance Electric Vehicle Using a Model-Based Torque-Vectoring Approach
Autor: Rafael Serralvo Neto, Joao Bruno Palermo, Renato Giacomini, Michele Rodrigues, Fabio Delatore, Giovana Betoni Rossi, Milene Galeti, Rudolf Theoderich Bühler
Publikováno v: World Electric Vehicle Journal, Vol 14, Iss 7, p 183 (2023)
Electric vehicles (EVs) enable the integration of powertrains with multiple motors, allowing for the adjustment of torque delivered to each wheel. This approach permits the implementation of torque vectoring techniques (TV) to enhance the vehicle’s
Externí odkaz: https://doaj.org/article/863aeb494364459cb833347a42d9c28b
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2
Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET
Autor: Alexis Cristiano Vilas Bôas, Saulo Gabriel Alberton, Nilberto Medina, Vitor Ângelo Paulino, Marco Antonio Assis Melo, Roberto Baginski Santos, Renato Giacomini, Tássio Cavalcante, Rafael Galhardo Vaz, Evaldo Junior, Luis Seixas, Saulo Finco, Marcilei Guazzelli
Publikováno v: Journal of Integrated Circuits and Systems. 16:1-7
In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic paramete
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::089e2ccce8df43f0dc56d7ad0685c1af
https://doi.org/10.29292/jics.v16i3.566
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3
E-textiles prototypes and applications on wearable devices
Autor: Renato Giacomini, Jéssica Maia Piccirillo
Publikováno v: Journal of Textile Engineering & Fashion Technology. 7:169-171
This scientific research has the purpose of studying conductive textiles, also known as "smart" textiles. At the ending of the study, we performed the assembly of functional prototypes to give the technology proof of concept to further studies. Betwe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c705a13590055fb1ee0736cf68fc0dc
https://doi.org/10.15406/jteft.2021.07.00285
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4
Bio-Amplifier based on MOS bipolar Pseudo-Resistors: A New Approach using its non-linear characteristic
Autor: Pedro L. Benko, Julio C. Lucchi, Renato Giacomini, Milene Galeti, Cleiton F. Pereira
Publikováno v: Journal of Integrated Circuits and Systems. 11:132-139
This paper proposes a new and refined bio-amplifier design, which associates DC offset cancellation, adequate frequency response and buffered outputs to a significant reduction of the signal recovery time. A MOS-Bipolar pseudo-resistor integrated to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::08a970f7692d7650173206bce971c7c3
https://doi.org/10.29292/jics.v11i2.437
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5
A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor
Autor: A. S. N. Pereira, Renato Giacomini, Joao Antonio Martino, Paula Ghedini Der Agopian, Andre L. Perin
Publikováno v: CIÊNCIAVITAE
Scopus-Elsevier
In this work, a simple model that accounts for the variation of electron mobility as a function of the silicondielectric interface crystallographic orientation is presented. Simulations were conducted in order to compute the effective mobility of pla
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3ce02660f803f4728ce718fb3f0355a
https://doi.org/10.29292/jics.v7i2.361
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6
SOI Stacked Transistors Tolerance to Single-Event Effects
Autor: A. S. N. Pereira, Renato Giacomini, R. T. Buhler, Marcilei A. G. Silveira, Andre L. Perin
Publikováno v: Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
This paper addresses a quantitative study of the reliability improvement of the stacked transistor structure. The susceptibility of integrated circuits to single-event effects caused by interaction with ionizing particles is analyzed at the semicondu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26c47ea0f3196154e327a24a3eb80dff
https://doi.org/10.1109/tdmr.2019.2912862
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8
Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
Autor: R. T. Buhler, Carla Novo, Renato Giacomini, Joao Baptista, Aryan Afzalian, Denis Flandre
Publikováno v: IEEE Sensors Journal. 17:1641-1648
Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6677fb1e0b8f05c1112fa0a6721aeac
https://doi.org/10.1109/jsen.2017.2647848
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9
Analysis of SiC MOSFETs Basic Parameters Aiming Application in Power Drivers for Electric Vehicles
Autor: R. T. Buhler, Renato Giacomini, F. C. Feitosa, W. Pereira
Publikováno v: 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).
The vehicular fleet around the world is going through an enormous transition in its energetic matrix, mostly because governments around the globe are concerned about pollution. This paper focus on the research of Wide Band Gap (WBG) Silicon Carbide (
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f8e5c4a171e5d658b8d9bf16518b658
https://doi.org/10.1109/sbmicro.2019.8919374
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10
Ionizing radiation hardness tests of GaN HEMTs for harsh environments
Autor: Alexis C. Vilas Bôas, Saulo Finco, A. Romero-Maestre, R. B. B. Santos, Nilberto H. Medina, M. A. Guazzelli, Renato Giacomini, F. R Palomo, L. E. Seixas, M. A. A. de Melo
Publikováno v: Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a469dfbeb4434d5c383e0ffaae0cd636
https://doi.org/10.1016/j.microrel.2020.114000
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