Zobrazeno 1 - 10
of 470
pro vyhledávání: '"Renard V."'
Autor:
Fohn, C., Wander, D., Nikolic, D., Garaudée, S., Courtois, H., Belzig, W., Chapelier, C., Renard, V., Winkelmann, C. B.
We investigate superconducting gallium in its $\alpha$ phase using scanning tunneling microscopy and spectroscopy at temperatures down to about 100 mK. High-resolution tunneling spectroscopies using both superconducting and normal tips show that supe
Externí odkaz:
http://arxiv.org/abs/2409.05758
Autor:
Mesple, F., Walet, N. R., de Laissardière, G. Trambly, Guinea, F., Dosenovic, D., Okuno, H., Paillet, C., Michon, A., Chapelier, C., Renard, V. T.
The study of moir\'e engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moir\'e pattern controlling their electronic properties. The field entered
Externí odkaz:
http://arxiv.org/abs/2308.13230
Autor:
Guan, Y., Dutreix, C., Gonzales-Herrero, H., Ugeda, M. M., Brihuega, I., Katsnelson, M. I., Yazyev, O. V., Renard, V. T.
Publikováno v:
Nature communications 15, 2927 (2024)
Fractional charges are one of the wonders of the fractional quantum Hall effect, a liquid of strongly correlated electrons in a large magnetic field. Fractional excitations are also anticipated in two-dimensional crystals of non-interacting electrons
Externí odkaz:
http://arxiv.org/abs/2307.10024
Autor:
Abdukayumov, K., Mičica, M., Ibrahim, F., Vergnaud, C., Marty, A., Veuillen, J. -Y., Mallet, P., de Moraes, I. Gomes, Dosenovic, D., Wright, A., Tignon, J., Mangeney, J., Ouerghi, A., Renard, V., Mesple, F., Bonell, F., Okuno, H., Chshiev, M., George, J. -M., Jaffrès, H., Dhillon, S., Jamet, M.
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimen
Externí odkaz:
http://arxiv.org/abs/2305.06895
Publikováno v:
Oil & Gas Science and Technology, Vol 42, Iss 6, Pp 695-745 (2006)
Le Comité d'Etudes Pétrolières Marines (CEPM) et le Centre National pour l'Exploitation des Océans (CNEXO) ont mené une série d'études sous-marines des escarpements ioniens pour en définir l'origine, l'âge et l'évolution. Les résultats pr
Externí odkaz:
https://doaj.org/article/14ff5d080c404ffab8b27ff06f4d2f59
Autor:
Mesple, F., Missaoui, A., Cea, T., Huder, L., de Laissardière, G. Trambly, Guinea, F., Chapelier, C., Renard, V. T.
Publikováno v:
Phys. Rev. Lett. 127, 126405 (2021)
The moir\'e of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This
Externí odkaz:
http://arxiv.org/abs/2012.02475
Autor:
Dutreix, C., González-Herrero, H., Brihuega, I., Katsnelson, M. I., Chapelier, C., Renard, V. T.
Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore of crucial importance for technological applications. While the spectral distribution in energy
Externí odkaz:
http://arxiv.org/abs/1910.00437
Autor:
Huder, L., Artaud, A., Quang, T. Le, de Laissardière, G. Trambly, Jansen, A. G. M., Lapertot, G., Chapelier, C., Renard, V. T.
Publikováno v:
Phys. Rev. Lett. 120, 156405 (2018)
We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculat
Externí odkaz:
http://arxiv.org/abs/1803.03505
Autor:
Quang, T. Le, Huder, L., Bregolin, F. Lipp, Artaud, A., Okuno, H., Pouget, S., Mollard, N., Lapertot, G., Jansen, A. G. M, Lefloch, F., Driessen, E. F. C, Chapelier, C., Renard, V. T.
Publikováno v:
Carbon 121, 48 (2017)
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts bu
Externí odkaz:
http://arxiv.org/abs/1705.08257
Publikováno v:
Scientific Reports, Nature Publishing Group, 2013, pp.2011
The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a lo
Externí odkaz:
http://arxiv.org/abs/1508.06848