Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Renan Trevisoli"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 634-641 (2023)
The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes. The implementation of different ground planes and substrate biases is an
Externí odkaz:
https://doaj.org/article/d3fd4fccb9064dfc86de49a51a865501
Autor:
Humberto Pereira Da Paz, Vinicius Santana Da Silva, Renan Diniz, Renan Trevisoli, Carlos Eduardo Capovilla, Ivan Roberto Santana Casella
Publikováno v:
IEEE Access, Vol 11, Pp 54122-54132 (2023)
This article aims to contribute for the improvement of low-power Radio Frequency Energy Harvesting (RFEH) designs based on Schottky Barrier Diode (SBD) rectifiers, presenting a study of the relationship between RF-DC Power Conversion Efficiency (PCE)
Externí odkaz:
https://doaj.org/article/10b94b1d636e442bb710fa073f566601
Autor:
Renan Trevisoli Doria
Publikováno v:
Biblioteca Digital de Teses e Dissertações da USPUniversidade de São PauloUSP.
Neste trabalho é apresentado um estudo dos transistores MOS sem junções (Junctionless Nanowire Transistors - JNTs), cujo foco é a modelagem de suas características elétricas e a análise do funcionamento dos mesmos quanto à tensão de limiar,
Autor:
Renan Trevisoli, Marcelo A. Pavanello, Rodrigo T. Doria, Carlos E. Capovilla, Sylvain Barraud, Michelly de Souza
Publikováno v:
IEEE Transactions on Electron Devices. 69:4730-4736
Modeling Schottky Diode Rectifiers Considering the Reverse Conduction for RF Wireless Power Transfer
Autor:
Humberto Pereira da Paz, Vinicius Santana da Silva, Ivan R. S. Casella, Rodrigo T. Doria, Renan Trevisoli, Carlos Eduardo Capovilla
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:1732-1736
The aim of this work is to model Schottky diodes series rectifier for application in Radio Frequency Energy Harvesting (RFEH). A time-domain approach is proposed, including the reverse conduction of the diodes, which can significantly degrade the Pow
Publikováno v:
Journal of Integrated Circuits and Systems. 16:1-7
In this work, the electrical features related to the capacitive coupling and temperature influence of the Ultra-Thin Body and Buried Oxide SOI MOSFET (UTBB) transistors are explored through numerical simulations. The impact of the substrate bias is o
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Autor:
Renan Trevisoli, Rodrigo T. Doria, Marcelo Antonio Pavanello, Sylvain Barraud, Michelly de Souza
Publikováno v:
IEEE Transactions on Nanotechnology. 20:234-242
In this work an evaluation of analog building blocks using junctionless nanowire transistors is presented. This analysis has been carried out through experimental measurements of junctionless nMOS transistors configured as two amplifier stages compos
Publikováno v:
Journal of Integrated Circuits and Systems. 8:116-124
Junctionless nanowire transistors (JNTs) are considered promising for the sub-20 nm era, since they provide a great scalability without the need for rigorously controlled doping techniques. In this work, the modeling of triple-gate JNTs is addressed,