Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ren-Yu He"'
105
There are two parts in this research work, ; one focuses on strain engineering for mobility enhancement in Ge transistor and the other is Ge bio-sensor device study. For the next generation Ge transistor, the strain engineer for device perfo
There are two parts in this research work, ; one focuses on strain engineering for mobility enhancement in Ge transistor and the other is Ge bio-sensor device study. For the next generation Ge transistor, the strain engineer for device perfo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/58450286102979957169
96
In this thesis, we use two commercial simulation tools to simulate devices’ electric behavior. We apply the tools to establish microcrystalline silicon thin film (μc-Si) optoelectronic devices such as microcrystalline silicon thin film sol
In this thesis, we use two commercial simulation tools to simulate devices’ electric behavior. We apply the tools to establish microcrystalline silicon thin film (μc-Si) optoelectronic devices such as microcrystalline silicon thin film sol
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89123210183190145403
Publikováno v:
Solid State Electronics Letters, Vol 1, Iss 2, Pp 92-97 (2019)
The conventional first order piezoresistance model has commonly been used to describe carrier mobility enhancement for low levels of process induced stress in Complementary Metal-Oxide-Semiconductor Field Effect Transistor (CMOS) technology. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbe2b382e84971a7f338d4be4e3674b8
http://www.sciencedirect.com/science/article/pii/S2589208819300213
http://www.sciencedirect.com/science/article/pii/S2589208819300213
Publikováno v:
Microelectronics Reliability. 83:223-229
Monolayer transition metal dichalcogenide (TMD) alloys, such as Mo1 − xWxS2, owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into high performance metal–oxide–semiconductor field-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d452e337c51f9c74a6cbd751f1a6214
https://doi.org/10.1016/j.microrel.2017.04.022
https://doi.org/10.1016/j.microrel.2017.04.022
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:8516-8521
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1978a21e8a6e920d2a42311f9f70cc1
https://doi.org/10.1166/jnn.2017.15150
https://doi.org/10.1166/jnn.2017.15150
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:8506-8510
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd8c47794d8caa4d12aeb48d3ab7598a
https://doi.org/10.1166/jnn.2017.15148
https://doi.org/10.1166/jnn.2017.15148
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:8511-8515
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06df9877b24f853eca38244adcdf043b
https://doi.org/10.1166/jnn.2017.15149
https://doi.org/10.1166/jnn.2017.15149
Publikováno v:
Microelectronic Engineering. 138:12-16
Display Omitted The impact of channel width and length on the electron mobility of Ge strained NMOSFETs.New piezoresistance model is proposed for electron mobility stress response.Physical insights for scaling down post-Si CMOS devices in the future.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::270de6f85da694b50c02700c01680831
https://doi.org/10.1016/j.mee.2015.01.013
https://doi.org/10.1016/j.mee.2015.01.013
Autor:
Ren Yu He
Publikováno v:
Applied Mechanics and Materials. :3300-3303
Nowadays, web is applied more and more extensively and the integration of application system between enterprises has become an important aspect of Web applications. The current mainstream middleware technologies such as CORBA, DCOM, etc. cannot be us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c4e37c32b38712924118a791490e5a
https://doi.org/10.4028/www.scientific.net/amm.644-650.3300
https://doi.org/10.4028/www.scientific.net/amm.644-650.3300
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
As short channel effect (SCE) and subthreshold leakage is demonstrated to be controlled effectively from conventional planar MOSFETs to the FinFET, we used a three-dimensional simulation of nFinFET structure to analysis fin width effect on the FinFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8a415fd199cd4940a910df4c164feb
https://doi.org/10.1109/ipfa.2015.7224443
https://doi.org/10.1109/ipfa.2015.7224443