Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Ren Bin Yang"'
Publikováno v:
Applied Surface Science. 439:583-588
Ultrathin MoO3 layers have been grown on Si substrates at 120 °C by atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo(CO)6] and ozone (O3) as the Mo- and O-source precursors, respectively. The ultrathin films were further annealed in a
Publikováno v:
ACS Applied Materials & Interfaces. 9:26201-26209
Giant circular blisters of up to 300 μm diameter and 10 μm deflection have been produced on nanometer-thick Al2O3-on-ZnO stacks grown by atomic layer deposition at 150 °C followed by annealing at elevated temperatures. Their shape changes upon var
Publikováno v:
Journal of Alloys and Compounds. 703:225-231
ZnO/Al2O3 superlattices, i.e., nanolaminate structures, have been grown by atomic layer deposition (ALD) on Si, sapphire, and quartz substrates at 150 °C. Morphological studies show that an increase in the cycle mixing ratios of Al2O3 to ZnO tends t
Publikováno v:
Procedia Engineering. 216:71-78
Surveillance drones face the threat of detection by defensive radar system, especially for its payload housed in a transparent acrylic dome. In this work, an optically transparent film stack in the visible and infra-red regime which consists of BaTiO
Traditional semiconductor packaging techniques and materials have been working well for conventional Si devices, which usually operate at temperatures up to 175 °C. As the operating temperature increases, these techniques exhibit failures such as bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f05f2b25fea4e58afaacf7f9997516d9
https://hdl.handle.net/10356/144950
https://hdl.handle.net/10356/144950
Publikováno v:
ACS Applied Materials & Interfaces. 8:2464-2469
Embedding metal nanoparticles in the active layer of organic solar cells has been explored as a route for improving charge carrier generation, with localized field enhancement as a proposed mechanism. However, embedded metal nanoparticles can also ac
Autor:
Dongzhi Chi, Sandipan Chakraborty, Aneesa Iskander, Jianrong Dong, Maruf Amin Bhuiyan, Goutam Kumar Dalapati, Taeyoon Lee, Saied Masudy-panah, Chandreswar Mahata, C. K. Chia, Ren Bin Yang, Sanghamitra Dinda
Publikováno v:
Materials Letters. 156:105-108
Development of high quality p-type epitaxial gallium–arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs
Autor:
Ren Bin Yang, Juan Ying Peng
Publikováno v:
Applied Mechanics and Materials. :1079-1083
The hydrolysis of diquat in deionized water, river water, and ground water were studied by incubation at 25°C and hydrolysis of diquat at different temperature (10°C, 25°C, and 35°C) in pH9 were investigated in the paper. The degradation was foll
Publikováno v:
JOURNAL OF HUNAN AGRICULTURAL UNIVERSITY. 39:660-665
Autor:
Hong Liu, Haisheng Leong, Sherry Lee Koon Yap, Kun Huang, Ren Bin Yang, Jie Deng, Jinghua Teng
Publikováno v:
Laser & Photonics Reviews. 13:1800289