Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Remziye Tülek"'
Autor:
Remziye Tülek
Publikováno v:
European Journal of Applied Physics. 5:29-34
The structural and optical properties of InxGa1-xN/InyGa1-yN multi quantum well (MQW) light emitting devices with/without electron injection layers were studied. The samples with electron injection layer consist of step-graded (GIE) and two step stai
Publikováno v:
European Journal of Applied Physics. 4:34-41
Scattering mechanisms that limit the mobility of two-dimensional electron gas (2DEG) in AlInGaN/GaN heterojunctions with three different barrier layer thicknesses of 37.2 (sample A), 10.6 (sample B) and 4.30 (sample C) nm were studied. Hall measureme
Publikováno v:
Chemical Papers. 74:2449-2459
Lanthanide nanoborates (LnBO3·3H2O (Ln: Dy, Tb)) were prepared in the presence of polyethylene glycol (PEG) using a buffered-precipitation method. The same procedure was performed without adding PEG to expose the chemical formulations of the samples
Publikováno v:
Heterocyclic Communications, Vol 26, Iss 1, Pp 148-156 (2020)
In this study, some new biscarbazole derivatives were synthesized for the purpose of being used in OLED technologies and related areas. The following compounds: {1,2-bis(2-(3,6-diphenyl-9H-carbazole-9-yl) ethoxy)ethane (C-1), bis[2-(2-(3,6-diphenyl-9
Publikováno v:
Journal of Molecular Structure. 1153:42-47
In this study, newly substituted carbazole derivatives of S1; (Z)-4-((9-isobutyl-9H-carbazol-3-ylimino) methyl)phenol, S2; (Z)-9-butyl- N-(2,3,4-trimethoxybenzylidine)-9H-carbazol-3-amine, S3; (Z)-4-((9-octyl-9H-carbazol-3-ylimino)methyl)benzene-1,2-
Publikováno v:
Volume: 3, Issue: 3 139-144
Journal of Boron
Journal of Boron
A new binary metal borate compound, trilithium diyttrium orthoborate, Li 3 Y 2 (BO 3 ) 3 was successfully synthesized by a solid-state reaction at 1000°C using the initial reactants of Li 2 CO 3 , Y 2 O 3 , and H 3 BO 3 (mole ratio 1.5:1:3). The pha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::285b3d3ff419c437194df0d6554cc359
https://dergipark.org.tr/tr/pub/boron/issue/40739/360284
https://dergipark.org.tr/tr/pub/boron/issue/40739/360284
Publikováno v:
The European Physical Journal Applied Physics
Tülek, Remziye (Balikesir Author)
In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the
In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec23f5404b258c6a18d73cff9ca18eab
https://avesis.gazi.edu.tr/publication/details/67cef2ee-1e42-4691-a58e-4078990e74c0/oai
https://avesis.gazi.edu.tr/publication/details/67cef2ee-1e42-4691-a58e-4078990e74c0/oai
Autor:
Sefer Bora Lisesivdin, Remziye Tülek, Jacob H. Leach, J. Q. Xie, S. Gökden, Hadis Morkoç, Ümit Özgür, A. Teke, Ekmel Ozbay, Qian Fan
Publikováno v:
Semiconductor Science and Technology
Gökden, Sibel (Balikesir Author)
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68b2451d1e03bf04f48b96f074fb49e5
https://hdl.handle.net/20.500.12462/6990
https://hdl.handle.net/20.500.12462/6990
Autor:
Mustafa Öztürk, Engin Arslan, Aykut Ilgaz, Remziye Tülek, Ekmel Ozbay, A. Teke, S. Gökden, Mehmet Kasap, Süleyman Özçelik
Publikováno v:
Journal of Applied Physics
Tülek, Remziye (Balikesir Author)
The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic c
The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5cd2a0bd968e521e5da899083362538
https://hdl.handle.net/11693/22695
https://hdl.handle.net/11693/22695
Autor:
Qian Fan, A. Teke, Sefer Bora Lisesivdin, Ümit Özgür, Hadis Morkoç, Jacob H. Leach, Ekmel Ozbay, Remziye Tülek, S. Gökden, Jinqiao Xie
Publikováno v:
New Journal of Physics
Teke, Ali (Balikesir Author)
The scattering mechanisms governing the transport properties of high mobility AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presen
The scattering mechanisms governing the transport properties of high mobility AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presen