Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Remy LeBlanc"'
This paper deals with the design and experimental results of the Engineering Model of a Solid State Power Amplifier (SSPA) based on 100 nm gate length Gallium Nitride on Silicon technology and spatial power combining techniques, targeting Ka-band dow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::804a8a656754d4d007faa6779f681a7d
Publikováno v:
2022 17th European Microwave Integrated Circuits Conference (EuMIC).
Autor:
Patrick E. Longhi, Walter Ciccognani, Antonio Serino, Remy Leblanc, Sergio Colangeli, Julien Poulain, Ernesto Limiti, Lorenzo Pace
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 68:2571-2578
This article addresses the classical problem of determining the extrinsic resistances ( $R_{G}$ , $R_{S}$ , and $R_{D}$ ) of field-effect transistors (FETs) and, in particular, of high-electron-mobility transistors (HEMTs). The presented approach rel
Autor:
Sergio Colangeli, Walter Ciccognani, Remy Leblanc, Patrick E. Longhi, Lorenzo Pace, Ernesto Limiti
Publikováno v:
IEEE Microwave and Wireless Components Letters. 30:601-604
In this letter, we present the design of a V- band low-noise amplifier for intersatellite crosslink receivers. The test vehicle, realized on industrial metamorphic gallium arsenide technology, operates from 57 to 66 GHz exhibiting 23-dB gain and an a
Autor:
Remy Leblanc, Lorenzo Pace, Sergio Colangeli, Walter Ciccognani, Antonio Serino, Patrick E. Longhi, Ernesto Limiti, Julien Poulain
Publikováno v:
Energies
Volume 14
Issue 18
Energies, Vol 14, Iss 5615, p 5615 (2021)
Volume 14
Issue 18
Energies, Vol 14, Iss 5615, p 5615 (2021)
This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significa
Autor:
Julien Poulain, F. Lecourt, Ahmed Gasmi, Ahmad Al Hajjar, Adrien Cutivet, Remy Leblanc, Bertrand Wroblewski
Publikováno v:
2020 50th European Microwave Conference (EuMC).
This paper presents the design and test results of a 6 to 18 GHz power amplifier MMIC fabricated with a Gallium Nitride process, using a reactively matched non-distributed architecture. This circuit exhibits a gain of 20 dB, input and output return l
Autor:
Lorenzo Pace, Ernesto Limiti, Julien Poulain, Sergio Colangeli, Walter Ciccognani, Remy Leblanc, Patrick E. Longhi
Publikováno v:
Electronics, Vol 10, Iss 134, p 134 (2021)
Electronics
Volume 10
Issue 2
Electronics
Volume 10
Issue 2
Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT
Autor:
Lorenzo Pace, Walter Ciccognani, Sergio Colangeli, Ernesto Limiti, Patrick E. Longhi, Remy Leblanc
In this work, a Ka-Band MMIC LNA designed with two different gate length GaN-on-Si devices is shown. Measurements show a gain higher than 29dB, 2.1dB average NF in the 34÷37.5GHz design band and a 1dBcp around 23-24dBm in the 35÷36.5GHz target band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d79447d2f36dd66282f14b3c6047e7a
http://hdl.handle.net/2108/274751
http://hdl.handle.net/2108/274751
Autor:
Lorenzo Pace, Remy Leblanc, Walter Ciccognani, Patrick E. Longhi, Sergio Colangeli, Ernesto Limiti
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
Design solutions and technology considerations of a 6–52 GHz cascode distributed amplifier are presented in this paper. The amplifier is designed in a Gallium Nitride on Silicon process with two different gate length transistors, namely 60 nm and 1
Autor:
Lorenzo Pace, Remy Leblanc, A. Suriani, Sergio Colangeli, Patrick E. Longhi, Ernesto Limiti, Ferdinando Costanzo, Walter Ciccognani
Publikováno v:
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC).
In this paper, a Single-Chip Front-End (SCFE) operating in Ka-Band (35–36.5 GHz) is presented. Chip is designed exploiting a GaN-on-Si technology featured by 100nm gate length provided by OMMIC foundry. This MMIC integrates high-power, low-noise am