Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Rempei Nakata"'
Publikováno v:
2013 e-Manufacturing & Design Collaboration Symposium (eMDC).
The semiconductor fab expends huge amounts of N2, de-ionized water (DIW), electricity and the like. Although the utility facility of the conventional semiconductor fab was designed to use the coefficient drawn from the past empirical rules, tool and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8991a2088388c998b3932445d340b107
https://doi.org/10.1109/emdc.2013.6756050
https://doi.org/10.1109/emdc.2013.6756050
Autor:
Masaki Hirano, Yoko Iwakaji, Tsunekazu Yasutake, Yuichi Kuroda, Rempei Nakata, Makiko Tamaoki
Publikováno v:
2013 e-Manufacturing & Design Collaboration Symposium (eMDC).
The importance of controlling airborne particle contamination in clean rooms and wafer environment is well-known and much effort has been devoted to keep the particle contamination from wafer environment. Table 1 shows particle detection limit on waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc1e55386297dd58a0e084af4ea4a56f
https://doi.org/10.1109/emdc.2013.6756055
https://doi.org/10.1109/emdc.2013.6756055
Autor:
Sachiyo Ito, Takashi Yoda, H. Kamijo, M. Inohara, T. Hachiya, K. Akiyama, K. Tabuchi, Hideki Shibata, K. Watanabe, Hideshi Miyajima, K. Higashi, Shingo Kadomura, N. Matsunaga, Hisashi Yano, Akihiro Kajita, Nobuo Hayasaka, Toshiaki Hasegawa, Katsuyuki Fujita, R. Kanamura, T. Shimayama, Y. Enomoto, Rempei Nakata, K. Honda, Naofumi Nakamura
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
In order to realize highly reliable low-k/Cu interconnects, optimum BEOL structures were developed for 130, 90 and 65 node logic devices respectively. For 65 nm node BEOL structure, the conventional monolithic dual damascene (DD) structure was replac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b28caa227e5631f359cdcb93781cbf72
https://doi.org/10.1109/iedm.2004.1419147
https://doi.org/10.1109/iedm.2004.1419147
Autor:
Keiji Fujita, T. Sakanaka, Hideshi Miyajima, S. Nakao, Hisashi Yano, Rempei Nakata, Takashi Yoda
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c243020de7929cdd6250d1075d7fc2fa
https://doi.org/10.7567/ssdm.2005.c-6-1
https://doi.org/10.7567/ssdm.2005.c-6-1
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
High performance low-k hybrid-DD structure (poly-arylene-ether (PAE)/ poly-methylsiloxane (MSX)) is realized by simultaneous electron beam (ebeam) curing technique, and applied to a 65 nm node Cu/low-k multilevel damascene process. By eBeam curing fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5770e5a03c0ce1d6243cce30d1781eb0
https://doi.org/10.1109/iitc.2004.1345754
https://doi.org/10.1109/iitc.2004.1345754
Autor:
M. Shimada, T. Onishi, Rempei Nakata, Hideshi Miyajima, K. Nagaseki, M. Yamaguchi, H. Hata, J. Murase
Publikováno v:
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203).
Recently IC makers have requested single wafer processes because the number of wafers in 1 lot is small and the size of the wafers are larger. Usually spin on low-k material is used by the furnace (FNC) for long time thermal cure process. A new elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b892b2265d1bf8514a8dc047de9549
https://doi.org/10.1109/issm.2001.962978
https://doi.org/10.1109/issm.2001.962978
Publikováno v:
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203).
A new method for plasma-CVD chamber cleaning using gas circulation has been developed. Unused gas contained in the exhaust gas during chamber cleaning was returned to chamber, and it was reused. Using this method, approximately 50% reduction of the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dbdde75c53de61c36cd48e1db62dad8
https://doi.org/10.1109/issm.2001.962955
https://doi.org/10.1109/issm.2001.962955
Publikováno v:
MRS Proceedings. 745
The XAFS measurement of the MSQ type low-k dielectrics (LKD™) was conducted to clarify the structure change with and without the EB cure. Furthermore, three different types of other MSQ films, the ladder structure, the random structure and the CVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b590db568a423e005005581e9f4a6b9f
https://doi.org/10.1557/proc-745-n3.7
https://doi.org/10.1557/proc-745-n3.7
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::723acfd578b20d2acbd3fdb032b2b1a2
https://doi.org/10.7567/ssdm.2001.p-1-9
https://doi.org/10.7567/ssdm.2001.p-1-9
Publikováno v:
MRS Proceedings. 686
An advanced FSG film of k=3.4 was developed, which exhibited excellent resistance for moisture absorption. Physical and chemical properties of this advanced FSG film were compared by typical FSG films deposited in both high density plasma (HDP) and P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c0e585c78c490db4ec3dc01afddf77
https://doi.org/10.1557/proc-686-a10.5
https://doi.org/10.1557/proc-686-a10.5