Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Remis Gaska"'
Autor:
Remis Gaska, Arūnas Kadys, Žydrūnas Podlipskas, Michael Shur, J. Jurkevičius, Jinwei Yang, Saulius Nargelas, Gintautas Tamulaitis, Max Shatalov, Jūras Mickevičius, Ramūnas Aleksiejūnas
Publikováno v:
Current Applied Physics. 16:633-637
Nonradiative recombination rate and diffusivity of nonequilibrium carriers were modified by intense laser pulses in AlGaN epilayers with Al content ranging from 16 to 71%. The epilayers were examined before and after the photomodification using light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88280ba1597bfa5942be505bfc7dca3e
https://doi.org/10.1016/j.cap.2016.03.010
https://doi.org/10.1016/j.cap.2016.03.010
Publikováno v:
Solid-State Electronics. 113:22-27
High electron concentration in 2DEG channel of AlInN/GaN devices is remarkably stable over a broad temperature range, enabling device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality AlInN/G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2057ce703340ae0eb8c7de08e8743447
https://doi.org/10.1016/j.sse.2015.05.007
https://doi.org/10.1016/j.sse.2015.05.007
Publikováno v:
physica status solidi c. 11:853-856
We report on GaN microwave varactors with capacitively coupled isolated electrodes. Metal-insulator-semiconductor (MIS) varactors have 4–5 orders of magni-tude lower leakage currents than similar devices with Schottky contacts. Low leakage capaciti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a43bb4c072c90bbca3dc3f79bfbe347
https://doi.org/10.1002/pssc.201300667
https://doi.org/10.1002/pssc.201300667
Publikováno v:
ECS Transactions. 58:129-143
Group III-Nitride based devices are expected to compete and possibly outperform state of the art silicon carbide based devices for power electronic applications. GaN, AlGaN, AlInGaN and other III-Nitride compound materials offer a very high breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9622ba568374a74a868d4381c3cb3ff5
https://doi.org/10.1149/05804.0129ecst
https://doi.org/10.1149/05804.0129ecst
Autor:
Maxim S. Shatalov, Saulius Marcinkevicius, Remis Gaska, Vytautas Liuolia, Daniel Billingsley, Michael Shur, Jinwei Yang
Publikováno v:
physica status solidi c. 10:853-856
Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructure have been examined by time-resolved photoluminescence (PL), transient photoreflectance and scanning near-field optical spectroscopy. The large GaN and AlIn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e42fff1a213ed2f11427f9d531f22ca
https://doi.org/10.1002/pssc.201200599
https://doi.org/10.1002/pssc.201200599
Autor:
Vytautas Liuolia, Michael Shur, Remis Gaska, Saulius Marcinkevicius, Jinwei Yang, Andrea Pinos
Publikováno v:
physica status solidi c. 9:1617-1620
Band gap fluctuations and carrier localization in AlxGa1-xN films with x values varying from 0.30 to 0.50 has been studied by scanning near-field optical microscopy (SNOM) by measuring photoluminescence. The measurements have revealed a dual localiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04fcbb6aa9494c61a7bd167f8f74113f
https://doi.org/10.1002/pssc.201100570
https://doi.org/10.1002/pssc.201100570
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:219-227
III-Nitride heterostructure field-effect transistors (HFETs) demonstrated a new paradigm in microwave switching and control applications due to unique combination of extremely low channel resistance (leading to low loss), very high RF power, low off-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a748eedcbf096787998ac617df634b44
https://doi.org/10.1142/s0129156411006556
https://doi.org/10.1142/s0129156411006556
Publikováno v:
IEEE Electron Device Letters. 35:449-451
The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3cace5f868133250110fa42e54d3fc8
https://doi.org/10.1109/led.2014.2304726
https://doi.org/10.1109/led.2014.2304726
Publikováno v:
International Journal of High Speed Electronics and Systems. 19:7-14
We present a novel approach to achieve terahertz-range cutoff frequencies and maximum frequencies of operation of GaN based heterostructure field-effect transistors (HFETs) at relatively high drain voltages. Strong short-channel effects limit the fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da3acfa0bd689a70f12e0014b4f960d3
https://doi.org/10.1142/s0129156409006047
https://doi.org/10.1142/s0129156409006047