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pro vyhledávání: '"Reki Fujiwara"'
Publikováno v:
Japanese Journal of Applied Physics.
Atomic layer etching (ALE) of silicon nitride film (SiNx) was demonstrated using oxygen gas cluster ion beam (O2-GCIB) with acetylacetone (Hacac) as adsorption gas. GCIB is a beam of aggregates of several thousand atoms, enabling low damage and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c3f0d522667c9bc09e7a5fe7b30e6b
https://doi.org/10.35848/1347-4065/acd065
https://doi.org/10.35848/1347-4065/acd065
