Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Rekha K James"'
Publikováno v:
Journal of Electronic Materials. 52:2695-2707
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::771205843eea16429d9ed1441880b5c1
https://doi.org/10.1007/s11664-023-10232-0
https://doi.org/10.1007/s11664-023-10232-0
Publikováno v:
SN Computer Science. 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c9136ecaa244d1bdc153367861fdf2
https://doi.org/10.1007/s42979-022-01622-y
https://doi.org/10.1007/s42979-022-01622-y
Publikováno v:
2022 IEEE 3rd International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a3c6c39cc19b78169a916e3199299cd
https://doi.org/10.1109/vlsisata54927.2022.10046624
https://doi.org/10.1109/vlsisata54927.2022.10046624
Publikováno v:
2022 IEEE 19th India Council International Conference (INDICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::685226981363e5cab6484889fa788a23
https://doi.org/10.1109/indicon56171.2022.10039775
https://doi.org/10.1109/indicon56171.2022.10039775
Autor:
Sonia Abraham, Rekha K. James
Publikováno v:
2022 IEEE 19th India Council International Conference (INDICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b09c1deb4078a18affad0e45d86632b8
https://doi.org/10.1109/indicon56171.2022.10040026
https://doi.org/10.1109/indicon56171.2022.10040026
Autor:
Rekha K. James, U S Shikha
Publikováno v:
Materials Today: Proceedings. 43:3452-3456
Tunnel Field Effect Transistors are one of the most promising ultra-low power steep slope device. Extremely low OFF current, sub-threshold swing which is less than Boltzmann's limit, higher immunity towards short channel effects and CMOS compatibilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfbf3a45b8185be2825ab60a16a5063d
https://doi.org/10.1016/j.matpr.2020.09.098
https://doi.org/10.1016/j.matpr.2020.09.098
Publikováno v:
Proceedings of the Great Lakes Symposium on VLSI 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883e1de1b8f5265904e38ce1c9b593a8
https://doi.org/10.1145/3526241.3530332
https://doi.org/10.1145/3526241.3530332
Autor:
Nithin Abraham, Rekha K. James
Publikováno v:
Journal of Computational Electronics. 19:304-309
An improved tunnel field-effect transistor with an L-shaped gate and channel (LLTFET) is proposed herein. The new structure shows an increased ON-current without any change in the overall area in comparison with state-of-the-art structures. The L-sha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::964653f5e3e1f28a3271e07d24580de3
https://doi.org/10.1007/s10825-020-01450-4
https://doi.org/10.1007/s10825-020-01450-4
Publikováno v:
2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5facad9e46440a634375601459815531
https://doi.org/10.1109/vlsid2022.2022.00062
https://doi.org/10.1109/vlsid2022.2022.00062
Publikováno v:
VDAT
Network-on-Chip (NoC) has been a viable solution for resolving the complexities associated with inter-processor communications in a Chip Multi Processor (CMP). NoC accounts for a significant portion of the total power consumed by a CMP. In a standard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2d0d124f799f54598f8f64a7b7cea99
https://doi.org/10.1109/vdat53777.2021.9601003
https://doi.org/10.1109/vdat53777.2021.9601003