Zobrazeno 1 - 10
of 145
pro vyhledávání: '"Reithmaier, Johann P."'
Autor:
Rudno-Rudziński, Wojciech, Gawełczyk, Michał, Podemski, Paweł, Balasubramanian, Ramasubramanian, Sichkovskyi, Vitalii, Willinger, Amnon J., Eisenstein, Gadi, Reithmaier, Johann P., Sęk, Grzegorz
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We inv
Externí odkaz:
http://arxiv.org/abs/2403.13504
Autor:
Lorke, Michael, Khanonkin, Igor, Michael, Stephan, Reithmaier, Johann Peter, Eisenstein, Gadi, Jahnke, Frank
In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic levels is
Externí odkaz:
http://arxiv.org/abs/2402.18165
Autor:
Lorke, Michael, Khanonkin, Igor, Michael, Stephan, Reithmaier, Johann Peter, Eisenstein, Gadi, Jahnke, Frank
Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process
Externí odkaz:
http://arxiv.org/abs/2205.15715
Autor:
Rudno-Rudziński, Wojciech, Burakowski, Marek, Reithmaier, Johann Peter, Musiał, Anna, Benyoucef, Mohamed
Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of externa
Externí odkaz:
http://arxiv.org/abs/2101.09739
Autor:
Holewa, Paweł, Gawełczyk, Michał, Maryński, Aleksander, Wyborski, Paweł, Reithmaier, Johann Peter, Sęk, Grzegorz, Benyoucef, Mohamed, Syperek, Marcin
Publikováno v:
Physical Review Applied, 14, 6, 064054 (2020)
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method lead
Externí odkaz:
http://arxiv.org/abs/2011.09198
Publikováno v:
Phys. Rev. Research 3, 033073 (2021)
We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamic
Externí odkaz:
http://arxiv.org/abs/2010.15198
Akademický článek
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Autor:
Mikhelashvili Vissarion, Gal Lior, Seri Guy, Bauer Sven, Khanonkin Igor, Eyal Ori, Willinger Amnon, Reithmaier Johann, Eisenstein Gadi
Publikováno v:
Nanophotonics, Vol 12, Iss 14, Pp 2823-2830 (2023)
We present a comprehensive study of the temperature dependent electronic and optoelectronic properties of a tunnelling injection quantum dot laser. The optical power-voltage (P opt–V) characteristics are shown to be correlated with the current-volt
Externí odkaz:
https://doaj.org/article/6abd0a82563142a1931b82137328fd84
Publikováno v:
Appl. Phys. Lett. 112, 172102 (2018)
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector and syste
Externí odkaz:
http://arxiv.org/abs/1801.06985
Publikováno v:
Nanophotonics, Vol 11, Iss 15, Pp 3457-3463 (2022)
Coherent control is a key experimental technique for quantum optics and quantum information processing. We demonstrate a new degree of freedom in coherent control of semiconductor quantum dot (QD) ensembles operating at room temperature using the tun
Externí odkaz:
https://doaj.org/article/a69a04faa9834a52a47d361e186f5497