Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Reinhard Springer"'
Autor:
C. Dzionk, H. Grimm, Reinhard Springer, W. H. Bruenger, Andreas Dietzel, Florian Letzkus, R. Berger
Publikováno v:
Microelectronic Engineering, 61-62, 295-300. Elsevier
The ion projector at the Fraunhofer Institute ISiT has been used for the development of patterned magnetic media for potential future use in magnetic hard disk drives. By 8.8 times demagnification of an open stencil mask, magnetic contrast is generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58b2fa62f9d758a84b0d9cc75ec78e06
https://doi.org/10.1016/s0167-9317(02)00565-8
https://doi.org/10.1016/s0167-9317(02)00565-8
Autor:
Ernst Haugeneder, Frank-Michael Kamm, Reinhard Springer, Werner Pamler, Herbert Schäfer, Jörg Butschke, Hans Loschner, Albrecht Ehrmann, Rainer Käsmaier
Publikováno v:
Japanese Journal of Applied Physics. 41:4146-4149
The issue of placement control is one of the key challenges of stencil mask technology. A high placement accuracy can only be achieved with a precise control of mechanical stress on a global and local scale. For this reason, the stress properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6264410c78f01a0f70b5dcfbab3b106b
https://doi.org/10.1143/jjap.41.4146
https://doi.org/10.1143/jjap.41.4146
Autor:
Florian Letzkus, Mathias Irmscher, B. Panzer, Reinhard Springer, Jörg Butschke, Hans Loschner, M. Mohaupt, S. Eder, R. Eberhardt, Thomas Struck, Christian Reuter, Josef Mathuni, Albrecht Ehrmann
Publikováno v:
Microelectronic Engineering. :213-218
The 4×Ion Projection Lithography (IPL), which is designed to reach sub 70-nm feature sizes is a promising technology for the Next Generation Lithography (NGL). An important feature of IPL is the ‘pattern lock’ system allowing on-line control of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c51d0ee83fce38c71e6fba3005b25cd
https://doi.org/10.1016/s0167-9317(01)00518-4
https://doi.org/10.1016/s0167-9317(01)00518-4
Autor:
Reinhard Springer, Mathias Irmscher, Christian Reuter, Jörg Butschke, Florian Letzkus, B. Höfflinger, Josef Mathuni, Albrecht Ehrmann
Publikováno v:
Microelectronic Engineering. 53:609-612
The 4x Ion Projection Lithography (IPL), which is designed to reach sub 100nm resolution on the wafer plane, uses stencil membrane masks out of 150mm SOI (Silicon On Insulator) wafers [1]. The structured circular membranes have a diameter of 126mm an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28eb2f29d02a845319e1524bda85243
https://doi.org/10.1016/s0167-9317(00)00388-9
https://doi.org/10.1016/s0167-9317(00)00388-9
Autor:
C. Schomburg, Christian Reuter, J. Mathuni, R. Käsmaier, Albrecht Ehrmann, Florian Letzkus, Jörg Butschke, Hans Loschner, Mathias Irmscher, Reinhard Springer, B. Höfflinger
Publikováno v:
Microelectronic Engineering. 46:473-476
A high yield fabrication process for stencil mask using SOI material is presented. Membranes and masks from different base materials have been fabricated. The stress of the membrane, depending on the doping level, has been determined. Initial pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e45c4710852e7718bea13d709fd0edaa
https://doi.org/10.1016/s0167-9317(99)00043-x
https://doi.org/10.1016/s0167-9317(99)00043-x
Publikováno v:
Microelectronic Engineering. 35:509-512
The Heidelberg Instruments Mikrotechnik (HIMT) DWL2.0 direct write laser lithography system is designed to provide cost-effective writing of submicron ASICs using a multi beam 442 nm HeCd laser with acousto-optical micro deflection. During the invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2e846237dc912067b8a5700e19fdd95
https://doi.org/10.1016/s0167-9317(96)00197-9
https://doi.org/10.1016/s0167-9317(96)00197-9
Publikováno v:
Journal of Photopolymer Science and Technology. 9:497-508
The use of TSI processes pushes the limits of both DUV-lithography and e-beam direct writing. However, the volume expansion combined with the drop in glass transition temperature during silylation with monofunctional agents prevents a high resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a398008cd92189a676e3a5478e863924
https://doi.org/10.2494/photopolymer.9.497
https://doi.org/10.2494/photopolymer.9.497
Autor:
Michael Jurisch, Mathias Irmscher, Wolfram Klingler, Reinhard Springer, Christof Klein, Florian Letzkus, Joerg Butschke, Hans Loeschner, Elmar Platzgummer
Publikováno v:
Photomask Technology 2008.
Two main challenges of future mask making are the decreasing throughput of the pattern generators and the insufficient line edge roughness of the resist structures. The increasing design complexity with smaller feature sizes combined with additional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38baca1128ef90088f12e506a30a1742
https://doi.org/10.1117/12.801401
https://doi.org/10.1117/12.801401
Autor:
Reinhard Springer, Frank-Michael Kamm, Guenther Ruhl, Josef Mathuni, Dirk Knobloch, Jenspeter Rau, Florian Letzkus
Publikováno v:
SPIE Proceedings.
EUV mask technology poses many new challenges on mask manufacturing processes. One crucial manufacturing step is the patterning of the EUV absorber. Although in the first concepts a Chromium film is used as absorber, increasing demands for shrinking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff1ad18aaeccad4e2360f92b0739b35
https://doi.org/10.1117/12.504243
https://doi.org/10.1117/12.504243
Autor:
Albrecht Ehrmann, Florian Letzkus, Joerg Butschke, W. H. Bruenger, H. Grimm, R. Berger, Stefan Hirscher, Andreas Wolter, Hans Eichhorn, Reinhard Springer, Rainer Kaesmaier, de P.W.H. Jager, Andreas Dietzel, Olaf Fortagne, D. Adam, M. Boehm, Bruce D. Terris, Herbert Vonach, Herbert Buschbeck, John C. Wolfe, Gerhard Stengl, Hans Loeschner, A. Chalupka, G. Gross, Gertraud Lammer, Paul Ruchhoeft, Elmar Platzgummer
Publikováno v:
Journal of Microlithography, Microfabrication and Microsystems, 2(34), 34-48. SPIE
Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In coopera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cafd3bf27efb75ddbb8574835c19c4a
https://research.tue.nl/nl/publications/2580e19c-8566-4ce0-9cc7-b4f21c54496e
https://research.tue.nl/nl/publications/2580e19c-8566-4ce0-9cc7-b4f21c54496e
