Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Reiner Garreis"'
High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node
Autor:
Sandip Halder, Thomas Korb, W. Högele, Philippe Leray, J. T. Neumann, Reiner Garreis, Dirk Zeidler, M. le Maire, Tomasz Garbowski
Publikováno v:
SPIE Proceedings.
We use the ZEISS MultiSEM to inspect patterns on separated chips of a semiconductor wafer suited for process window characterization at imec-N10 logic node. We systematically analyze the impact of imaging parameters of the MultiSEM on quantitative me
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
With higher NA (≫ 0.33) and increased chief-ray-angles, mask effects will significantly impact the overall scanner performance. We discuss these effects in detail, paying particular attention to the multilayer-absorber interaction, and show that th
Publikováno v:
SPIE Proceedings.
With high NA (>0.33), and the associated higher angles of incidence on the reflective EUV mask, mask induced effects will significantly impact the overall scanner-performance. We discuss the expected effects in detail, in particular paying attention
Autor:
Tilmann Heil, Koen van Ingen Schenau, Marc Bienert, Paul Gräupner, Oliver Natt, Reiner Garreis, Aksel Göhnemeier, Martin Lowisch, Steve Hansen
Publikováno v:
Alternative Lithographic Technologies.
We derive an imaging budget from the performance of EUV optics with NA = 0.32, and demonstrate that the 22nm node requirements are met. Based on aerial image simulations, we analyze the impact of all relevant contributors, ranging from conventional q
Publikováno v:
SPIE Proceedings.
To enable optical lithography for sub 55 nm features, ArF immersion lithography requires numerical apertures to be significantly larger than 1 - thus leading to new challenges for optical design. Refractive lens designs are not capable to capture the
Autor:
Markus Brotsack, Steve Hansen, Tilmann Heil, Rafael Egger, Jo Finders, Paul Gräupner, Reiner Garreis
Publikováno v:
SPIE Proceedings.
The specific properties of the illumination system are of increasing importance for the realization of low-k1 applications in modern lithography. In this paper, we present numerical investigations of optical imaging performance using real illuminator
Autor:
Steve Hansen, Jan Mulkens, Bill Arnold, Robert John Socha, Reiner Garreis, Donis G. Flagello, Mircea Dusa
Publikováno v:
SPIE Proceedings.
The use of immersion technology will extend the lifetime of 193nm and 157nm lithography by enabling numerical apertures (NA) much greater than 1.0. A definition of effective k1 is derived to assist in comparison of various technologies with differing
Autor:
Martin Lowisch, Paul Graeupner, Reiner Garreis, Aksel Goehnermeier, Donis G. Flagello, Tilmann Heil
Publikováno v:
SPIE Proceedings.
This paper presents a comprehensive study of the impact of wavefront errors on low-k1-imaging performance using high numerical aperture NA lithographic systems. In particular, we introduce a linear model that correctly describes the aberration induce
Autor:
Robert John Socha, Steven G. Hansen, Donis G. Flagello, Carsten Koehler, Paul Graeupner, Reiner Garreis, Aksel Goehnermeier, Martin Lowisch
Publikováno v:
SPIE Proceedings.
This study assesses the various approaches to printing contacts in the sub 100nm regime using 193nm. Traditional techniques are analyzed along with the use of tri-tone contacts and pupil filtering. Approaches using attPSM masks looks promising down t
Autor:
Reiner Garreis
Publikováno v:
Optical Fabrication and Testing.
As the semiconductor industry follows the trend to higher integration of functionalities on a chip while increasing the speed of the operations the feature sizes on a chip continue to shrink at a rate of 30 % every two years. The imaging capabilities