Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Reina Galeazzi Isasmendi"'
Autor:
Marcos Palacios Bonilla, Godofredo García Salgado, Antonio Coyopol Solís, Román Romano Trujillo, Fabiola Gabriela Nieto Caballero, Enrique Rosendo Andrés, Crisóforo Morales Ruiz, Justo Miguel Gracia Jiménez, Reina Galeazzi Isasmendi
Publikováno v:
Crystals, Vol 14, Iss 6, p 491 (2024)
In this work, optical–structural and morphological behavior when Nd is incorporated into ZnO is studied. ZnO and Nd-doped ZnO (ZnO-Nd) films were deposited at 900 °C on Silicon n-type substrates (100) by using the Hot Filament Chemical Vapor Depos
Externí odkaz:
https://doaj.org/article/124b4e128ad54cdb9b4bb7301402e13e
Autor:
José Carlos Zepeda Medina, Enrique Rosendo Andrés, Crisóforo Morales Ruíz, Eduardo Camacho Espinosa, Leticia Treviño Yarce, Reina Galeazzi Isasmendi, Román Romano Trujillo, Godofredo García Salgado, Antonio Coyopol Solis, Fabiola Gabriela Nieto Caballero, Ana Cristina Carranza Sanchez
Publikováno v:
Heliyon, Vol 9, Iss 3, Pp e14547- (2023)
Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS
Externí odkaz:
https://doaj.org/article/5e37b5609ca0461d80c2fd78295f448d
Autor:
Reina Galeazzi Isasmendi, Isidro Juvenal Gonzalez Panzo, Crisóforo Morales-Ruiz, Román Romano Trujillo, Enrique Rosendo, Iván García, Antonio Coyopol, Godofredo García-Salgado, Rutilo Silva-González, Iván Oliva Arias, Carolina Tabasco Novelo
Publikováno v:
Crystals, Vol 11, Iss 8, p 968 (2021)
Copper oxide (CuO) films were deposited onto glass substrates by the microwave assisted chemical bath deposition method, and varying the pH of the solution. The pH range was varied from 11.0 to 13.5, and the effects on the film properties were studie
Externí odkaz:
https://doaj.org/article/811239e65f20487b9387690451c775fc
Autor:
J. Jesús Cruz Bueno, Godofredo García Salgado, R. Fabiola Balderas Valadez, J. Alberto Luna López, F. Gabriela Nieto Caballero, Tomás Díaz Becerril, Enrique Rosendo Andrés, Antonio Coyopol Solís, Román Romano Trujillo, Crisóforo Morales Ruiz, J. Miguel Gracia Jiménez, Reina Galeazzi Isasmendi
Publikováno v:
Crystals, Vol 9, Iss 2, p 68 (2019)
The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using mo
Externí odkaz:
https://doaj.org/article/85f851ad7a9c43c3977b7d413e190699
Autor:
Crisóforo Morales-Ruiz, Enrique Rosendo-Andrés, Ramon Pena-Sierra, F.G. Nieto-Caballero, T. Díaz-Becerril, Antonio Coyopol-Solis, Reina Galeazzi-Isasmendi, Roman Romano-Trujillo, G. García-Salgado, Delfino R. Gutiérrez
Publikováno v:
European Journal of Engineering and Technology Research. 6:177-180
Microstructured films of undoped zinc oxide (ZnO) and ZnO doped with nickel (ZnO:Ni) were grown by hot filament chemical vapor deposition (HFCVD) technique on Si (100) substrates at 500 °C. Pellets of ZnO and ZnO:NiO as oxidant agenst were used. A s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fbae8dbbc905a7bd6a2d5268ed5ae85
https://doi.org/10.24018/ejeng.2021.6.5.2550
https://doi.org/10.24018/ejeng.2021.6.5.2550
Autor:
Eduardo Alejandro Valdez-Torija, Antonio Coyopol, Godofredo García-Salgado, Román Romano-Trujillo, Crisóforo Morales-Ruiz, Enrique Rosendo-Andrés, Marco Antonio Vásquez-Agustín, Justo Miguel Gracia-Jiménez, Reina Galeazzi-Isasmendi, Francisco Morales-Morales
Publikováno v:
Crystals; Volume 13; Issue 4; Pages: 613
In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs films were grown at 800, 900
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8de2b7909d2bf446c4fb147c6c374dd3
https://doi.org/10.3390/cryst13040613
https://doi.org/10.3390/cryst13040613
Autor:
Crisóforo Morales-Ruiz, Iván García, A. Coyopol, Isidro Juvenal Gonzalez Panzo, Iván Oliva Arias, Enrique Rosendo, Carolina Tabasco Novelo, G. García-Salgado, Roman Romano Trujillo, Rutilo Silva-González, Reina Galeazzi Isasmendi
Publikováno v:
Crystals
Volume 11
Issue 8
Crystals, Vol 11, Iss 968, p 968 (2021)
Volume 11
Issue 8
Crystals, Vol 11, Iss 968, p 968 (2021)
Copper oxide (CuO) films were deposited onto glass substrates by the microwave assisted chemical bath deposition method, and varying the pH of the solution. The pH range was varied from 11.0 to 13.5, and the effects on the film properties were studie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab4daccc0f301aa5a44de378e6a4a7a6
Autor:
Roman Romano Trujillo, Leticia Treviño Yarce, Rutilo Silva González, Enrique Rosendo Andrés, Godofredo Garcia Salgado, Crisóforo Morales Ruiz, Antonio Coyopol Solis, Reina Galeazzi Isasmendi, Tomas Diaz Becerril
Publikováno v:
European Journal of Engineering Research and Science. 4:1-4
Orthorhombic tin sulfide (SnS) thin films have been deposited on stainless steel (SS) substrates by Chemical Bath Deposition (CBD) at 25, 35 and 70 °C with a deposit time of 8 hours each one. XRD analysis showed that samples obtained at 25 °C and 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d427f98da9afca555f709cd1dc2b90
https://doi.org/10.24018/ejers.2019.4.1.980
https://doi.org/10.24018/ejers.2019.4.1.980
Autor:
Leticia Treviño Yarce, Enrique Rosendo Andres, Roman Romano Trujillo, Crisoforo Morales Ruiz, Tomas Diaz Becerril, Rutilo Silva Gonzalez, Reina Galeazzi Isasmendi, Antonio Coyopol Solis, Godofredo Garcia Salgado
Publikováno v:
European Journal of Engineering and Technology Research. 4:1-4
Orthorhombic tin sulfide (SnS) thin films have been deposited on stainless steel (SS) substrates by Chemical Bath Deposition (CBD) at 25, 35 and 70 °C with a deposit time of 8 hours each one. XRD analysis showed that samples obtained at 25 °C and 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f888c5f147bb6c078c340910bce629a
https://doi.org/10.24018/ejeng.2019.4.1.980
https://doi.org/10.24018/ejeng.2019.4.1.980
Autor:
Reina Galeazzi Isasmendi, R. Fabiola Balderas Valadez, F. Gabriela Nieto Caballero, Tomas Diaz Becerril, J. Jesús Cruz Bueno, Godofredo Garcia Salgado, J. Miguel Gracia Jiménez, Roman Romano Trujillo, Antonio Coyopol Solis, J. Alberto Luna López, Crisóforo Morales Ruiz, Enrique Rosendo Andrés
Publikováno v:
Crystals, Vol 9, Iss 2, p 68 (2019)
Crystals
Volume 9
Issue 2
Crystals
Volume 9
Issue 2
The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2840ea6483f1f6bba8291c31b56073bd
https://www.mdpi.com/2073-4352/9/2/68
https://www.mdpi.com/2073-4352/9/2/68