Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Reijiro Shimura"'
Autor:
Takanori Mimura, Reijiro Shimura, Akinori Tateyama, Yoshiko Nakamura, Takahisa Shiraishi, Hiroshi Funakubo
Publikováno v:
physica status solidi (a).
Autor:
Takao Shimizu, Yukari Inoue, Takanori Mimura, Yoshitomo Tanaka, Reijiro Shimura, Hiroshi Funakubo
Publikováno v:
Journal of the Ceramic Society of Japan. 128:539-543
Autor:
Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo
Publikováno v:
Phys. Status Solidi RRL.
Publikováno v:
Sensors and Actuators A: Physical. 295:125-132
The integration of a thin-film piezoelectric actuator with standard CMOS (Complementary Metal-Oxide-Semiconductor) technology has attracted many practical interests for totally integrated smart devices such as electronics, microfluidics, sensors and
Autor:
Takanori Nagasaki, Hiroshi Funakubo, Takashi Teranishi, Reijiro Shimura, Akira Kishimoto, Shinya Kondo, Tomoaki Yamada
Publikováno v:
Japanese Journal of Applied Physics. 60:SFFB13
Publikováno v:
Sensors and Actuators A: Physical. 267:287-292
We report on the fabrication of a low-temperature sol-gel derived lead zirconium titanate (PZT) film and actuator, achieved by introducing a thermal ultraviolet/ozone (UV/O3) treatment. A spin-coated PZT gel film was irradiated with UV light on a hea
Autor:
Takanori Nagasaki, Reijiro Shimura, Tomoaki Yamada, Hiroshi Funakubo, Takashi Teranishi, Akira Kishimoto, Shinya Kondo
Publikováno v:
Japanese Journal of Applied Physics. 60:070905
Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconi
Autor:
Akinori Tateyama, Hiroshi Funakubo, Yukari Inoue, Yoshitomo Tanaka, Reijiro Shimura, Takanori Mimura, Tomoaki Yamada, Takao Shimizu
Publikováno v:
Japanese Journal of Applied Physics. 60:031009
Y-doped HfO2 films with thicknesses of 150−1000 nm were prepared on Pt/TiO x /SiO2/Si substrates by the sputtering method and subsequent heat treatment at 800 °C. XRD analysis showed that the films consisted of an almost pure orthorhombic/tetragon