Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Rehder, E M"'
Publikováno v:
Journal of Applied Physics; 12/15/2003, Vol. 94 Issue 12, p7892-7903, 12p, 7 Black and White Photographs, 2 Charts, 5 Graphs
Publikováno v:
Rehder, E. M. ; Cismaru, C. ; Zampardi, P. J. ; Welser, R. E. (2005) Novel base doping profile for improved speed and power. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
We have experimentally studied the effect of twonewbase doping profiles on the base transit time of a GaAs npn heterojunction bipolar transistor. The doping in a region close to the collector is reduced either by a doping grade or a stepwise reductio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d433cc031dcb5a98c1101cc070a81996
http://amsacta.unibo.it/1327/
http://amsacta.unibo.it/1327/
Autor:
Rehder, E. M., Jun, B., Chiu, P., Wierman, S., Edmondson, K., Liu, X.-Q., Mesropian, S., Pien, P., Boisvert, J., Karam, N.H.
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC); 2014, p3608-3611, 4p
Publikováno v:
MRS Online Proceedings Library; 2001, Vol. 696 Issue 1, p1-6, 6p
Publikováno v:
MRS Online Proceedings Library; 2001, Vol. 673 Issue 1, p1-6, 6p
Publikováno v:
Journal of Physics: Condensed Matter; 8/11/2004, Vol. 16 Issue 31, pS3373-S3385, 13p
Autor:
Taylor, Edward W., Cardimona, David A., Law, Daniel C., Boisvert, J. C., Rehder, E. M., Chiu, P. T., Mesropian, S., Woo, R. L., Liu, X. Q., Hong, W. D., Fetzer, C. M., Singer, S. B., Bhusari, D. M., Edmondson, K. M., Zakaria, A., Jun, B., Krut, D. D., King, R. R., Sharma, S. K., Karam, N. H.
Publikováno v:
Proceedings of SPIE; October 2013, Vol. 8876 Issue: 1 p88760Y-88760Y-8, 798849p