Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Rehab Kotb Ali"'
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::344e8498ab7ebd597f2af78fa8bff496
https://doi.org/10.1109/asmc57536.2023.10121075
https://doi.org/10.1109/asmc57536.2023.10121075
Autor:
Rehab Kotb Ali, Le Hong
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a88368f527f908c725eebca3057f2dd
https://doi.org/10.1117/12.2614609
https://doi.org/10.1117/12.2614609
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XII.
Printing cut mask in SAMP (Self Aligned Multi Patterning) is very challenging at advanced nodes. One of the proposed solutions is to print the cut shapes selectively. Which means the design is decomposed into mandrel tracks, Mandrel cuts and non-Mand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f74c1c2fd498807257377f713ca3ec09
https://doi.org/10.1117/12.2297415
https://doi.org/10.1117/12.2297415
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fdcdef4793ac3870811795e1455e01b
https://doi.org/10.1117/12.2297412
https://doi.org/10.1117/12.2297412