Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Regino Sandoval"'
Autor:
Carl Schell, J. Reed, W. Hunks, Stephen J. Hudgens, Charles H. Dennison, Regino Sandoval, W. Li, Tyler Lowrey, J. Fournier, J. F. Zheng, Wolodymyr Czubatyj
Publikováno v:
IEEE Electron Device Letters. 31:999-1001
Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6adb43fb4b00b8448c584199be7be37f
https://doi.org/10.1109/led.2010.2052233
https://doi.org/10.1109/led.2010.2052233
Autor:
J. Cleary, Carl Schell, J. Reed, W. Hunks, P. Chen, Stephen J. Hudgens, Jim Ricker, W. Li, Tyler Lowrey, Regino Sandoval, Wolodymyr Czubatyj, Charles H. Dennison, J. F. Zheng
Publikováno v:
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.
MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe35768e74183eed8d377309aa14d71
https://doi.org/10.1109/nvmts.2011.6137102
https://doi.org/10.1109/nvmts.2011.6137102
Autor:
Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender
Publikováno v:
MRS Proceedings. 1160
We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324f69b10eb11a49f55d1e3ecfd59c1a
https://doi.org/10.1557/proc-1160-h14-11
https://doi.org/10.1557/proc-1160-h14-11