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Autor:
Daniel P. Ceperley, Timothy A. Brunner, Reg Bowley, Emily Gallagher, Anne E. McGuire, Masaru Higuchi
Publikováno v:
SPIE Proceedings.
Contact holes represent one of the biggest critical dimension (CD) mask metrology challenges for 45nm technology mask development. The challenge is a consequence of both wafer and mask sensitivities. Large mask error factors and the small process win