Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Refik Kortan"'
Autor:
Jim Horwitz, Mick Pechan, Katie Runkles, Nitin Samarth, Thomas P. Russell, Irfan Siddiqi, Deborah Counce, Giulia Galli, Jim Murphy, Mark A. Kasevich, Amir Yacoby, Refik Kortan, Linda Horton, Christopher Monroe, Danna E. Freedman, Kathy Jones, Aashish A. Clerk, Brenda Wyatt, Hans M. Christen, Jeff Krause, Tom Settersten, Toni Taylor, Chris Palmstrom, Stephen Jesse, George Maracas, David D. Awschalom, Michael E. Flatté, Birgitta Whaley, Darrell G. Schlom, Matthias J. Graf, Jun Ye, William D. Oliver, Bruce C. Garrett, Peter Denes, Jim Davenport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e40a2f9af16b7c0e4c356fcaab4edb4
https://doi.org/10.2172/1616258
https://doi.org/10.2172/1616258
Publikováno v:
Nano Letters. 3:1717-1721
The unusual interfacial lattice-mismatch properties of a periodic film and a quasiperiodic substrate are investigated in the Al films grown on an Al-Co-Ni decagonal substrate. The resulting mismatch causes the formation of well-oriented nanometric si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13eb02a5be53369a4b69884e4ba8240b
https://doi.org/10.1021/nl034751l
https://doi.org/10.1021/nl034751l
Autor:
Eric Garfunkel, Ahmet Refik Kortan, A. M. Sergent, H. Gossmann, J. Kwo, P. Ye, Torgny Gustafsson, Yves J. Chabal, B. Yang, W. H. Schulte, J.P. Mannaerts, J. Bude, K. K. Ng, Minghwei Hong, B. Busch, David A. Muller
Publikováno v:
Journal of Crystal Growth. 251:645-650
Our ability of controlling the growth and interfaces of thin dielectric films on III–V semiconductors by ultrahigh vacuum deposition has led to investigations of gate stacks containing rare earth oxides of Gd 2 O 3 and Y 2 O 3 as alternative high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b6ca64c51fe89bca6581ca9fb996bd1
https://doi.org/10.1016/s0022-0248(02)02192-9
https://doi.org/10.1016/s0022-0248(02)02192-9
Autor:
David J. DiGiovanni, Richart E. Slusher, Alastair M. Glass, Andrew John Stentz, Alice E. White, Benjamin J. Eggleton, A. Refik Kortan, T.A. Strasser
Publikováno v:
Bell Labs Technical Journal. 5:168-187
This paper describes the development of fiber optics technology — an essential element of the telecommunications revolution — and reviews the remarkable progress in fiber design and fabrication, optical amplifiers, UV-induced fiber gratings, nove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52d4ca9e479aa7284906f7445cdd1f8
https://doi.org/10.1002/bltj.2213
https://doi.org/10.1002/bltj.2213
Publikováno v:
Surface and Interface Analysis. 34:441-444
Atomically thin films of Gd 2 O 3 grow on GaAs(100) in the cubic α-Mn 2 O 3 structure exposing the (110) surface. The film disorders upon brief sputtering with 1000 eV Ar + ions for 10 s. Subsequent annealing of the sample at 700 K restores the crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7409bb60842b1f722e6a92715d10c1e7
https://doi.org/10.1002/sia.1334
https://doi.org/10.1002/sia.1334
Publikováno v:
Journal of Materials Research. 17:1208-1212
We report a new SBN-tellurite ceram-glass system, where the [(SrO)(y)(BaO)(1−y) (Nb2O5)](1−x) (SBN) ferroelectric crystallites precipitate on a tellurite (TeO2)x glass surface with nominal compositions x < 0.8 and y = 0.6 to 0.75. X-ray diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bedeb5ae9e531974d7134eb07d8ef691
https://doi.org/10.1557/jmr.2002.0178
https://doi.org/10.1557/jmr.2002.0178
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 120:47-53
Using the line-shape analysis of the Mn 2p3/23d3d Auger transitions and by observing the Mn 3p→3d transitions in electron energy-loss spectroscopy, we have studied the local density of electronic states of the crystalline cubic and the quasicrystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f74ea242b08f77348734d9e1079f6ca
https://doi.org/10.1016/s0368-2048(01)00283-3
https://doi.org/10.1016/s0368-2048(01)00283-3
Autor:
B. J. Sapjeta, Ahmet Refik Kortan, K. L. Queeney, T. S. Lay, Yves J. Chabal, A. M. Sergnt, Joseph M. Rosamilia, Robert L. Opila, David A. Muller, Joseph Petrus Mannaerts, S. N. G. Chu, Minghwei Hong, J. Kwo, J. J. Krajewski, T. Boone, H. W. Krautter
Publikováno v:
Journal of Applied Physics. 89:3920-3927
We present the materials growth and properties of both epitaxial and amorphous films of Gd2O3 (κ=14) and Y2O3 (κ=18) as the alternative gate dielectrics for Si. The rare earth oxide films were prepared by ultrahigh vacuum vapor deposition from an o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7067ebe3fa15f83113c899e840be401
https://doi.org/10.1063/1.1352688
https://doi.org/10.1063/1.1352688
Autor:
C. Steiner, J. Kwo, Ahmet Refik Kortan, B. Bolliger, Mehmet Erbudak, Minghwei Hong, Joseph Petrus Mannaerts
Publikováno v:
Physical Review B. 62:R10614-R10617
We report an fcc structure for the epitaxial Gd2O3 films grown on GaAs~100!. This fluorite-derived structure appears to be stabilized by epitaxy with the substrate and has a great similarity to the GaAs structure. A model calculation supports this fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca8119fa69b46b3a464a0a9db883c2f
https://doi.org/10.1103/physrevb.62.r10614
https://doi.org/10.1103/physrevb.62.r10614
Autor:
Ahmet Refik Kortan, B. Bolliger, J. Kwo, Minghwei Hong, Joseph Petrus Mannaerts, Mehmet Erbudak
Publikováno v:
Surface and Interface Analysis. 30:514-517
The structure and alignment of epitaxial molecular-beam-epitaxy-grown single-crystal Gd2O3 films on GaAs(100) are studied using secondary electron imaging. We have found that the 115 A thick Gd2O3 film has a cubic structure. The [110] axis is aligned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::133183c3308a23a31357bed7eef84200
https://doi.org/10.1002/1096-9918(200008)30:1<514::aid-sia760>3.0.co
https://doi.org/10.1002/1096-9918(200008)30:1<514::aid-sia760>3.0.co