Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Reenu Garg"'
Autor:
Jinming Sun, Oliver Haeberlen, Clemens Ostermaier, Gerhard Prechtl, Ramakrishna Tadikonda, Eric Persson, Reenu Garg, Mohamed Imam, Sameh Khalil, Alain Charles
Publikováno v:
AIP Advances, Vol 11, Iss 5, Pp 055101-055101-10 (2021)
The addition of a p-GaN drain to a conventional gate-injection transistor (GIT), forming the so-called hybrid drain embedded GIT, is crucial in the suppression of the dynamic Rdson. The DC leakage due to hole injection is limited to around 10 nA/mm a
Externí odkaz:
https://doaj.org/article/395a853db1964f978a07212d211175e9
Autor:
Dennis Meyer, Xuning Zhang, Reenu Garg, Bruce Odekirk, Steve Chenetz, Ehab Tarmoom, Kevin Speer
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100b59f700530068dce6a8347d93d138
https://doi.org/10.1109/wipda56483.2022.9955309
https://doi.org/10.1109/wipda56483.2022.9955309
Autor:
Florin Udrea, Dario Pagnano, Giorgia Longobardi, Hyeongnam Kim, Reenu Garg, Mohamed Imam, Alain Charles, Jinming Sun
Publikováno v:
Microelectronics Reliability. :610-614
The impact of electron injection from the substrate on the dynamic Ron of GaN-on-Si High Electron Mobility Transistors (HEMTs) has been investigated by means of back-bias transient and vertical leakage measurements and TCAD simulations. A strong corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c55c87603e34518a44f30de62b810efe
https://doi.org/10.1016/j.microrel.2018.07.102
https://doi.org/10.1016/j.microrel.2018.07.102
Autor:
Dario Pagnano, Clemens Ostermaier, Giorgia Longobardi, Alain Charles, Hyeongnam Kim, Jinming Sun, Mohamed Imam, Reenu Garg, Florin Udrea
GaN-on-Si is a lateral technology and as such it allows the integration of high voltage High Electron Mobility Transistors and low voltage devices on the same chip, thus enabling the miniaturization and reduction of parasitic inductances. Due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f2fb65e2b89dd3d6e2f68688c44c828
https://www.repository.cam.ac.uk/handle/1810/308754
https://www.repository.cam.ac.uk/handle/1810/308754
Autor:
Alain Charles, Gerhard Prechtl, Mohamed Imam, Sameh G. Khalil, R. Tadikonda, Oliver Haeberlen, Eric Persson, Clemens Ostermaier, Reenu Garg, Jinming Sun
Publikováno v:
AIP Advances, Vol 11, Iss 5, Pp 055101-055101-10 (2021)
The addition of a p-GaN drain to a conventional gate-injection transistor (GIT), forming the so-called hybrid drain embedded GIT, is crucial in the suppression of the dynamic Rdson. The DC leakage due to hole injection is limited to around 10 nA/mm a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7e0ccf713135200aae24c62be8ccfee
https://doi.org/10.1063/5.0049319
https://doi.org/10.1063/5.0049319
Autor:
Giorgia Longobardi, Florin Udrea, Shu Yang, Reenu Garg, Gianluca Camuso, Mohamed Imam, Alain Charles, Dario Pagnano, Jinming Sun
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Vertical leakage in lateral GaN devices has a significant contribution to the overall off-state current at high blocking voltages and high temperatures. It could could lead to premature breakdown before avalanche or dielectric breakdown occur. This p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f10096e77c844b950b82c97b43d430ec
https://doi.org/10.23919/ispsd.2017.7988918
https://doi.org/10.23919/ispsd.2017.7988918
Autor:
Giorgia Longobardi, Alain Charles, Reenu Garg, Florin Udrea, Mohamed Imam, Dario Pagnano, Jinming Sun
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD12
This paper analyzes the possible physical mechanisms responsible of high vertical leakage in GaN-on-Si power transistors. Vertical leakage and back bias measurement are presented and compared against TCAD simulations with the aim of identifying the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9418b74359c2a0e3b8db748a3d02c437
https://doi.org/10.7567/1347-4065/ab14d1
https://doi.org/10.7567/1347-4065/ab14d1
Autor:
Bhargav Pandya, Deepak Veereddy, Mohamed Imam, John Ambrus, Reenu Garg, Tim McDonald, Alfonso Diy, Stuart Cardwell
Publikováno v:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
The Safe Operating Area (SOA) characteristics of 600 V rated GaN-on-Si based cascode power devices in the Forward Bias (FB) and Short Circuit (SC) test conditions were evaluated in this study. The results from FBSOA tests at ≤ 150 °C device channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec693240ca70167a0b33d5cb8a9fd869
https://doi.org/10.1109/wipda.2016.7799930
https://doi.org/10.1109/wipda.2016.7799930
Autor:
Florin Udrea, Jinming Sun, Reenu Garg, Shu Yang, Giorgia Longobardi, Alain Charles, Gianluca Camuso, Mohamed Imam, Congyong Zhu
Publikováno v:
Applied Physics Letters. 110:163506
Gallium Nitride on Silicon (GaN-on-Si) devices feature a relatively thick epi buffer layer to release the stress related to the lattice constant mismatch between GaN and Si. The buffer layer is formed by several AlGaN-based transition layers with dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d54f910580392ae266a043895905c96
https://doi.org/10.1063/1.4980140
https://doi.org/10.1063/1.4980140
Publikováno v:
ECS Meeting Abstracts. :382-382
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e72f9f09891fe5437a539447ebe5ba69
https://doi.org/10.1149/ma2005-01/8/382
https://doi.org/10.1149/ma2005-01/8/382