Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Redwan N. Sajjad"'
Publikováno v:
Journal of Materials Chemistry C. 11:6360-6375
We synthesize compact Cd1−xZnxS films for low to high Zn content using chemical bath deposition by maintaining the pH at an optimum level throughout the process. We report high transmittance and wide bandgap for high Zn content films.
Publikováno v:
Solar Energy. 240:342-353
Publikováno v:
2022 12th International Conference on Electrical and Computer Engineering (ICECE).
Publikováno v:
2022 12th International Conference on Electrical and Computer Engineering (ICECE).
Publikováno v:
2021 IEEE International Conference on Telecommunications and Photonics (ICTP).
Autor:
Jabir Bin Jahangir, Tahmina Ahmed Rima, Md. Mahamudul Hasan Mithhu, Md. Shahadat Sarker Shakir, M. Ryyan Khan, Redwan N. Sajjad, Md. Al-Mahmud
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
The sunbelt regions have high insolation—they are also within high soiling zones due to arid climates. Additionally, urban areas of South Asia have high construction activity, resulting in artificially increased dust. Therefore, to design and opera
Publikováno v:
Journal of Applied Physics. 130:173106
Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature technology for thin
Autor:
C. Schulte-Braucks, Roger Loo, Suman Datta, Dimitri A. Antoniadis, Ben Grisafe, Pankaj Sharma, Gilbert Bruce Rayner, Anurag Vohra, Cheng-Hsien Wu, Ram Krishna Ghosh, Siegfried Mantl, Chih-Chieh Yeh, Rahul Pandey, Mike Barth, Redwan N. Sajjad, Nils von den Driesch, Wilman Tsai, Dan Buca
Publikováno v:
IEEE Transactions on Electron Devices. 64:4354-4362
We present a detailed study on fabrication and characterization of Ge/GeSn heterojunction p-type tunnel-field-effect-transistors (TFETs). Critical process modules as high-k stack and p-i-n diodes are addressed individually. As a result an ultrathin e
Publikováno v:
arXiv
We provide a detailed study of the oxide- semiconductor interface trap assisted tunneling (TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path before the band-to-band tunneling (BTBT) is initiated. With a modified Sh
Autor:
Pratik Agnihotri, Redwan N. Sajjad, Xiaodong Zhou, Avik W. Ghosh, Ji Ung Lee, Mirza M. Elahi, Alexander Kerelsky, Frances M. Ross, Abhay Pasupathy, K. M. Masum Habib, Dennis Wang
Publikováno v:
ACS nano. 13(2)
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on t