Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Redjem, Walid"'
Autor:
Jia, Zhetao, Qarony, Wayesh, Park, Jagang, Hooten, Sean, Wen, Difan, Zhiyenbayev, Yertay, Seclì, Matteo, Redjem, Walid, Dhuey, Scott, Schwartzberg, Adam, Yablonovitch, Eli, Kanté, Boubacar
Inverse design is a powerful tool in wave-physics and in particular in photonics for compact, high-performance devices. To date, applications have mostly been limited to linear systems and it has rarely been investigated or demonstrated in the nonlin
Externí odkaz:
http://arxiv.org/abs/2308.03036
Autor:
Liu, Wei, Ivanov, Vsevolod, Jhuria, Kaushalya, Ji, Qing, Persaud, Arun, Redjem, Walid, Simoni, Jacopo, Zhiyenbayev, Yertay, Kante, Boubacar, Lopez, Javier Garcia, Tan, Liang Z., Schenkel, Thomas
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder in silicon
Externí odkaz:
http://arxiv.org/abs/2302.05814
Autor:
Redjem, Walid, Zhiyenbayev, Yertay, Qarony, Wayesh, Ivanov, Vsevolod, Papapanos, Christos, Liu, Wei, Jhuria, Kaushalya, Balushi, Zakaria Al, Dhuey, Scott, Schwartzberg, Adam, Tan, Liang, Schenkel, Thomas, Kanté, Boubacar
Silicon is the most scalable optoelectronic material, and it has revolutionized our lives in many ways. The prospect of quantum optics in silicon is an exciting avenue because it has the potential to address the scaling and integration challenges, th
Externí odkaz:
http://arxiv.org/abs/2301.06654
Autor:
Jia, Zhetao, Seclì, Matteo, Avdoshkin, Alexander, Redjem, Walid, Dresselhaus, Elizabeth, Moore, Joel, Kanté, Boubacar
Publikováno v:
Sci. Adv. 9, eadf9330 (2023)
Complex networks play a fundamental role in understanding phenomena from the collective behavior of spins, neural networks, and power grids to the spread of diseases. Topological phenomena in such networks have recently been exploited to preserve the
Externí odkaz:
http://arxiv.org/abs/2211.12719
Autor:
Ivanov, Vsevolod, Simoni, Jacopo, Lee, Yeonghun, Liu, Wei, Jhuria, Kaushalya, Redjem, Walid, Zhiyenbayev, Yertay, Papapanos, Christos, Qarony, Wayesh, Kante, Boubacar, Persaud, Arun, Schenkel, Thomas, Tan, Liang Z.
Publikováno v:
Phys. Rev. B 106, 134107 (2022)
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them pr
Externí odkaz:
http://arxiv.org/abs/2206.04824
Autor:
Redjem, Walid, Amsellem, Ariel J., Allen, Frances I., Benndorf, Gabriele, Bin, Jianhui, Bulanov, Stepan, Esarey, Eric, Feldman, Leonard C., Fernandez, Javier Ferrer, Lopez, Javier Garcia, Geulig, Laura, Geddes, Cameron R., Hijazi, Hussein, Ji, Qing, Ivanov, Vsevolod, Kante, Boubacar, Gonsalves, Anthony, Meijer, Jan, Nakamura, Kei, Persaud, Arun, Pong, Ian, Obst-Huebl, Lieselotte, Seidl, Peter A., Simoni, Jacopo, Schroeder, Carl, Steinke, Sven, Tan, Liang Z., Wunderlich, Ralf, Wynne, Brian, Schenkel, Thomas
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22
Externí odkaz:
http://arxiv.org/abs/2203.13781
The scaling of electromagnetic apertures is a long-standing question that has been investigated for at least six decades but has still not been resolved [1-5]. The size of single aperture cavities, bounded by the existence of higher-order transverse
Externí odkaz:
http://arxiv.org/abs/2202.12145
Light-actuated motors, vehicles, and even space sails have drawn tremendous attention for basic science and applications in space, biomedical, and sensing domains. Optical bound states in the continuum (BIC) are topological singularities of the scatt
Externí odkaz:
http://arxiv.org/abs/2202.04751
Autor:
Jaffal, Ali, Redjem, Walid, Regreny, Philippe, Nguyen, Hai Son, Cueff, Sébastien, Letartre, Xavier, Patriarche, Gilles, Rousseau, Emmanuel, Cassabois, Guillaume, Gendry, Michel, Chauvin, Nicolas
Publikováno v:
Nanoscale 11, 21847-21855 (2019)
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the mo
Externí odkaz:
http://arxiv.org/abs/1906.11708
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.