Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Reda Ramdani"'
Autor:
Yamina André, Agnès Trassoudaine, Evelyne Gil, Vladimir G. Dubrovskii, Christine Leroux, Guillaume Monier, Catherine Bougerol, Reda Ramdani, Dominique Castelluci, Zhenning Dong
Publikováno v:
2016 International Conference Laser Optics (LO)
2016 International Conference Laser Optics (LO), Jun 2016, St Petersburg, Russia. ⟨10.1109/LO.2016.7549901⟩
2016 International Conference Laser Optics (LO), Jun 2016, St Petersburg, Russia. ⟨10.1109/LO.2016.7549901⟩
International Conference Laser Optics (LO), St Petersburg, RUSSIA, JUN 27-JUL 01, 2016; International audience; We report on the first self -catalyzed growth of GaAs nanowires on patterned and non -patterned silicon (111) wafers by hydride vapor phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7daf6481ff9cb346719b670a2c976cce
https://hal.science/hal-01435124
https://hal.science/hal-01435124
Autor:
Amélie Dussaigne, Geoffrey Avit, Agnès Trassoudaine, Yamina André, Evelyne Gil, Dominique Castelluci, Pierre Ferret, Stéphanie Gaugiran, Bruno Gayral, Yann Lee, Elissa Roche, Catherine Bougerol, M. Reda Ramdani
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, 2016, 16 (5), pp.2509-2513. ⟨10.1021/acs.cgd.5b01244⟩
Crystal Growth & Design, American Chemical Society, 2016, 16 (5), pp.2509-2513. ⟨10.1021/acs.cgd.5b01244⟩
Crystal Growth & Design, 2016, 16 (5), pp.2509-2513. ⟨10.1021/acs.cgd.5b01244⟩
Crystal Growth & Design, American Chemical Society, 2016, 16 (5), pp.2509-2513. ⟨10.1021/acs.cgd.5b01244⟩
Selective area growth hydride vapor phase epitaxy (SAG-HVPE) and metal organic vapor phase epitaxy (MOVPE) processes are coupled for the synthesis of high quality c-axis InGaN/GaN core/shell structures. The core consists of high aspect ratio GaN rods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::359b3546446ab906488b1cb3130f161b
https://hal.science/hal-02007652
https://hal.science/hal-02007652
Autor:
Daniel Paget, Bruno Gérard, Evelyne Gil, Alistair Rowe, Dominique Castelluci, Agnès Trassoudaine, Reda Ramdani, Yamina André
Publikováno v:
Journal of Crystal Growth. 306:111-116
Selective area growth experiments were carried out by hydride vapour phase epitaxy (HVPE) on (1 0 0) GaAs-patterned substrates for the making of GaAs tips to be used as spin injectors. The tips exhibited various morphological profiles bounded by low
Autor:
Reda Ramdani, Agnès Trassoudaine, Yamina André, Jurij Grecenkov, Kaddour Lekhal, Christine Robert-Goumet, Dominique Castelluci, Vladimir G. Dubrovskii, Frank Glas, Geoffrey Avit, Luc Bideux, Jean-Christophe Harmand, Guillaume Monier, Christine Leroux, Evelyne Gil
Publikováno v:
Nano Letters
Nano Letters, 2014, 14 (7), pp.3938-3944. ⟨10.1021/nl501239h⟩
Nano Letters, American Chemical Society, 2014, 14 (7), pp.3938-3944. ⟨10.1021/nl501239h⟩
Nano Letters, 2014, 14 (7), pp.3938-3944. ⟨10.1021/nl501239h⟩
Nano Letters, American Chemical Society, 2014, 14 (7), pp.3938-3944. ⟨10.1021/nl501239h⟩
We report the Au catalyst-assisted synthesis of 20 μm long GaAs nanowires by the vapor-liquid-solid hydride vapor phase epitaxy (HVPE) exhibiting a polytypism-free zincblende phase for record radii lower than 15 nm down to 5 nm. HVPE makes use of Ga
Autor:
Kaddour Lekhal, Philip E. Hoggan, M. Reda Ramdani, Geoffrey Avit, Christine Leroux, Evelyne Gil, Rabih Ajib, Guillaume Monier, Fabian Cadiz, Alistair Rowe, Agnès Trassoudaine, David Colas, Yamina André, Elodie Petit, Dominique Castelluci, Daniel Paget
Publikováno v:
Journal of Chemical Physics
Journal of Chemical Physics, American Institute of Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩
Journal of Chemical Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩
Journal of Chemical Physics, American Institute of Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩
Journal of Chemical Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩
International audience; High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron mi-croscopy and micro-Raman spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb0a94cc9c78ee5a6e97b76ece2b76ab
https://hal-univ-tln.archives-ouvertes.fr/hal-01727422
https://hal-univ-tln.archives-ouvertes.fr/hal-01727422
Autor:
Steve Arscott, Alistair Rowe, Daniel Paget, Evelyne Gil, Reda Ramdani, S. Bansropun, Bruno Gérard, Duong Vu, Emilien Peytavit, Yamina André
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82, pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82, pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩
International audience; The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::735e98eef9583eb249f49c222326e442
http://arxiv.org/abs/1006.2915
http://arxiv.org/abs/1006.2915
Autor:
Agnès Trassoudaine, C. Darraud, E. Gil-Lafon, Reda Ramdani, Rachida Saoudi, Dominique Castelluci
Publikováno v:
Journal Physique IV
Journal Physique IV, 2006, 135, pp.265. ⟨10.1051/jp4:2006135083⟩
Journal Physique IV, 2006, 135, pp.265. ⟨10.1051/jp4:2006135083⟩
Nous avons utilise la croissance cristalline a morphologie controlee pour l'elaboration de cristaux photoniques bidimensionnelles de materiaux III-V sur substrat III - V masque. Appliquee sur GaAs cette methode a demontre qu'il est possible de faire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07e53493a2709ad0f80ba6026f1dc819
https://hal-ujm.archives-ouvertes.fr/ujm-00351625
https://hal-ujm.archives-ouvertes.fr/ujm-00351625
Autor:
D. Paget, Alistair Rowe, Bruno Gérard, Yamina André, Reda Ramdani, Duong Vu, Evelyne Gil, S. Bansropun
Publikováno v:
Journal of Applied Physics. 107:093712
Local spin injectors using GaAs tips at the end of transparent cantilevers have been fabricated using a combination of epitaxial growth, etching processes and photolithographic techniques. The tip luminescence polarization is found to be small becaus
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