Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Rechem, Djamil."'
Publikováno v:
In Materials Today: Proceedings 2022 49 Part 4:932-936
Publikováno v:
Journal of Semiconductors. 44:032801
Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with different Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometry and photoc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a060ec16c08613fa8440499aeaff488
https://doi.org/10.1088/1674-4926/44/3/032801
https://doi.org/10.1088/1674-4926/44/3/032801
Akademický článek
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Publikováno v:
Journal of Computational Electronics. 15:1308-1315
The influence of gate dielectric materials on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. This model is based on a two-dimensional nonequilibrium Green's function formalism performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4231d3733703387899ae9f900c97e26a
https://doi.org/10.1007/s10825-016-0901-7
https://doi.org/10.1007/s10825-016-0901-7
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2017, 623, pp.1
Thin Solid Films, Elsevier, 2017, 623, pp.1
International audience; Tin oxide SnO2 thin films were deposited by sol gel method on glass substrates. The as-deposited thin films were then annealed at 550 °C for different time durations (15, 30, 60 and 120 min). Structural and morphological inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::414deb1a4afa6d7e721f8952c075aefc
https://hal.archives-ouvertes.fr/hal-01701510
https://hal.archives-ouvertes.fr/hal-01701510
Publikováno v:
Advanced Materials Research. 685:340-344
The potential impact of high permittivity gate dielectrics on the performance of a ballistic nanoscale CNTFET is studied over a wide range of dielectric permittivities with low temperatures ranging from room temperature down to 100 K. Using the non-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2367477a79a618bf0461de7a2c8a9be6
https://doi.org/10.4028/www.scientific.net/amr.685.340
https://doi.org/10.4028/www.scientific.net/amr.685.340
Publikováno v:
2016 International Semiconductor Conference (CAS).
A new junctionless trial-material cylindrical surrounding gate-MOSFET (JLTMCSG-MOSFET) has been investigated to improve carrier transport efficiency. Therefore, it is expected that the short channel effects are reduced. An analytical model has been u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a53583ef5115dba5c6900f8c98ae613
https://doi.org/10.1109/smicnd.2016.7783083
https://doi.org/10.1109/smicnd.2016.7783083
Publikováno v:
2016 International Semiconductor Conference (CAS).
This work presents a detailed study of the influence of different annealing temperatures on the structural, morphological and optical properties 5 wt% Ni doped SnO 2 thin films. Ni doped SnO 2 thin films were deposited by sol gel method on glass subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ea89ba77f336d636627ac46a3a33c3
https://doi.org/10.1109/smicnd.2016.7783075
https://doi.org/10.1109/smicnd.2016.7783075
Publikováno v:
Journal of Nano- & Electronic Physics; 2019, Vol. 11 Issue 2, p1-5, 5p
Akademický článek
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